TY - JOUR
T1 - Characterization of Josephson and quasi-particle currents in MgB 2/MgB2 and Pb/Pb contact junctions
AU - Shen, Y.
AU - Singh, Rakesh
AU - Sanghavi, S.
AU - Wei, Y.
AU - Chamberlin, Ralph
AU - Moeckly, B. H.
AU - Rowell, J. M.
AU - Newman, Nathan
PY - 2010/5/28
Y1 - 2010/5/28
N2 - The electrical properties of Josephson junctions formed by pressing two oxidized MgB2 thin films together were measured. This fabrication method allowed us to characterize the properties of MgB2 junctions with native or thermal oxide barriers without exposing the barrier and bottom electrode to the high temperature deposition process required to synthesize the top MgB2 electrode in the conventional trilayer junctions. These junctions, with electrode Tcs of ∼ 32K, have critical currents up to ∼ 25K, broadened energy gaps at over 30K, subharmonic gap structures at moderate voltages (∼0.6-2.0mV) and Fiske modes at low voltage (<0.6mV). We show that this method can be used to quantify the barrier properties and the extent of suppression of the superconductor order parameter at the surface. Our results suggest that the near interface superconducting order parameter is reduced at both native and thermal oxide surfaces, with a greater reduction at the thermal oxide surface. For comparison, the same experimental equipment and protocol were used to investigate Pb contact junctions. The junctions containing a thermal oxide barrier were found to have electrical properties similar to those of multiply connected junctions modulated by their self-field, as initially observed by Clarke and Fulton in a SLUG (superconducting low inductance undulatory galvanometer) (Clarke and Fulton 1969 J. Appl. Phys. 40 4470).
AB - The electrical properties of Josephson junctions formed by pressing two oxidized MgB2 thin films together were measured. This fabrication method allowed us to characterize the properties of MgB2 junctions with native or thermal oxide barriers without exposing the barrier and bottom electrode to the high temperature deposition process required to synthesize the top MgB2 electrode in the conventional trilayer junctions. These junctions, with electrode Tcs of ∼ 32K, have critical currents up to ∼ 25K, broadened energy gaps at over 30K, subharmonic gap structures at moderate voltages (∼0.6-2.0mV) and Fiske modes at low voltage (<0.6mV). We show that this method can be used to quantify the barrier properties and the extent of suppression of the superconductor order parameter at the surface. Our results suggest that the near interface superconducting order parameter is reduced at both native and thermal oxide surfaces, with a greater reduction at the thermal oxide surface. For comparison, the same experimental equipment and protocol were used to investigate Pb contact junctions. The junctions containing a thermal oxide barrier were found to have electrical properties similar to those of multiply connected junctions modulated by their self-field, as initially observed by Clarke and Fulton in a SLUG (superconducting low inductance undulatory galvanometer) (Clarke and Fulton 1969 J. Appl. Phys. 40 4470).
UR - http://www.scopus.com/inward/record.url?scp=77952634341&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952634341&partnerID=8YFLogxK
U2 - 10.1088/0953-2048/23/7/075003
DO - 10.1088/0953-2048/23/7/075003
M3 - Article
AN - SCOPUS:77952634341
SN - 0953-2048
VL - 23
JO - Superconductor Science and Technology
JF - Superconductor Science and Technology
IS - 7
M1 - 075003
ER -