Characterization of ion implanted GaN

Brian Skromme; G. L. Martinez; L. Krasnobaev; D. B. Poker

Characterization of ion implanted GaN

Brian Skromme, G. L. Martinez, L. Krasnobaev, D. B. Poker

IAFSE-ECEE: Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C _Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P _N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P _Ga antisite double donors, which are stable in p-type material.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume	639
State	Published - 2001
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

Other

Other	GaN and Related Alloys 2000
Country	United States
City	Boston, MA
Period	11/27/00 → 12/1/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Skromme, B., Martinez, G. L., Krasnobaev, L., & Poker, D. B. (2001). Characterization of ion implanted GaN. In C. Wetzel, M. Shur, U. Mishra, B. Gil, & K. Kishino (Eds.), Materials Research Society Symposium - Proceedings (Vol. 639)

@inproceedings{7253ceaf7e9445e6b26a7c4aac6cf78f,

title = "Characterization of ion implanted GaN",

abstract = "Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material. ",

author = "Brian Skromme and Martinez, {G. L.} and L. Krasnobaev and Poker, {D. B.}",

year = "2001",

language = "English (US)",

volume = "639",

editor = "C Wetzel and M Shur and U Mishra and B Gil and K Kishino",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

}

TY - GEN

T1 - Characterization of ion implanted GaN

AU - Skromme, Brian

AU - Martinez, G. L.

AU - Krasnobaev, L.

AU - Poker, D. B.

PY - 2001

Y1 - 2001

N2 - Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.

AB - Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.

UR - http://www.scopus.com/inward/record.url?scp=0035558824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035558824&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0035558824

VL - 639

BT - Materials Research Society Symposium - Proceedings

A2 - Wetzel, C

A2 - Shur, M

A2 - Mishra, U

A2 - Gil, B

A2 - Kishino, K

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -