Characterization of ion implanted GaN

Brian Skromme, G. L. Martinez, L. Krasnobaev, D. B. Poker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume639
StatePublished - 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

Other

OtherGaN and Related Alloys 2000
CountryUnited States
CityBoston, MA
Period11/27/0012/1/00

Fingerprint

Excitons
Vacancies
Photoluminescence
Ions
Temperature
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Skromme, B., Martinez, G. L., Krasnobaev, L., & Poker, D. B. (2001). Characterization of ion implanted GaN. In C. Wetzel, M. Shur, U. Mishra, B. Gil, & K. Kishino (Eds.), Materials Research Society Symposium - Proceedings (Vol. 639)

Characterization of ion implanted GaN. / Skromme, Brian; Martinez, G. L.; Krasnobaev, L.; Poker, D. B.

Materials Research Society Symposium - Proceedings. ed. / C Wetzel; M Shur; U Mishra; B Gil; K Kishino. Vol. 639 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Skromme, B, Martinez, GL, Krasnobaev, L & Poker, DB 2001, Characterization of ion implanted GaN. in C Wetzel, M Shur, U Mishra, B Gil & K Kishino (eds), Materials Research Society Symposium - Proceedings. vol. 639, GaN and Related Alloys 2000, Boston, MA, United States, 11/27/00.
Skromme B, Martinez GL, Krasnobaev L, Poker DB. Characterization of ion implanted GaN. In Wetzel C, Shur M, Mishra U, Gil B, Kishino K, editors, Materials Research Society Symposium - Proceedings. Vol. 639. 2001
Skromme, Brian ; Martinez, G. L. ; Krasnobaev, L. ; Poker, D. B. / Characterization of ion implanted GaN. Materials Research Society Symposium - Proceedings. editor / C Wetzel ; M Shur ; U Mishra ; B Gil ; K Kishino. Vol. 639 2001.
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