Abstract
Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | C Wetzel, M Shur, U Mishra, B Gil, K Kishino |
Volume | 639 |
State | Published - 2001 |
Event | GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000 |
Other
Other | GaN and Related Alloys 2000 |
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Country/Territory | United States |
City | Boston, MA |
Period | 11/27/00 → 12/1/00 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials