Characterization of ion implanted GaN

Brian Skromme, G. L. Martinez, L. Krasnobaev, D. B. Poker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume639
StatePublished - 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

Other

OtherGaN and Related Alloys 2000
CountryUnited States
CityBoston, MA
Period11/27/0012/1/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Skromme, B., Martinez, G. L., Krasnobaev, L., & Poker, D. B. (2001). Characterization of ion implanted GaN. In C. Wetzel, M. Shur, U. Mishra, B. Gil, & K. Kishino (Eds.), Materials Research Society Symposium - Proceedings (Vol. 639)