Abstract
Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | C Wetzel, M Shur, U Mishra, B Gil, K Kishino |
| Volume | 639 |
| State | Published - 2001 |
| Event | GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000 |
Other
| Other | GaN and Related Alloys 2000 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/27/00 → 12/1/00 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Characterization of ion implanted GaN. / Skromme, Brian; Martinez, G. L.; Krasnobaev, L.; Poker, D. B.
Materials Research Society Symposium - Proceedings. ed. / C Wetzel; M Shur; U Mishra; B Gil; K Kishino. Vol. 639 2001.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of ion implanted GaN
AU - Skromme, Brian
AU - Martinez, G. L.
AU - Krasnobaev, L.
AU - Poker, D. B.
PY - 2001
Y1 - 2001
N2 - Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.
AB - Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or C Ga) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic P N in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to P Ga antisite double donors, which are stable in p-type material.
UR - http://www.scopus.com/inward/record.url?scp=0035558824&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:0035558824
VL - 639
BT - Materials Research Society Symposium - Proceedings
A2 - Wetzel, C
A2 - Shur, M
A2 - Mishra, U
A2 - Gil, B
A2 - Kishino, K
ER -