Characterization of high open-circuit voltage double sided buried contact (DSBC) silicon solar cells

A. U. Ebong, S. H. Lee, W. Warta, C. B. Honsberg, S. R. Wenham

Research output: Contribution to journalArticle

4 Scopus citations


The double sided buried contact (DSBC) silicon solar cells have consistently shown high open-circuit voltages (Voc) than its single sided buried contact counterpart because of better rear surface passivation. The rear surface passivation which is provided by the rear floating junction is effective only when there is no leakage in the rear floating junction. However, the partial shunting of the rear floating junction can cause a drop in the fill factor of the cell which has been the only parameter limiting the realization of the structure's potentials. In this paper, LBIC (light beam induce current), spectral response, dark I-V and Jsc-Voc measurements for DSBC cells have been carried out to help explain some of the experimentally observed attributes of this structure. The partly shunted rear floating junction has been identified by LBIC measurement as low current regions near the rear metal contacts.

Original languageEnglish (US)
Pages (from-to)283-299
Number of pages17
JournalSolar Energy Materials and Solar Cells
Issue number3
StatePublished - Feb 15 1997



  • Bifacial
  • Buried contact
  • Double sided
  • Silicon
  • Solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this