TY - JOUR
T1 - Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
AU - Chandrasekhar, D.
AU - Smith, David
AU - Strite, S.
AU - Lin, M. E.
AU - Morkoç, H.
N1 - Funding Information:
Electron microscopy was conducted at the Center for High Resolution Electron Microscopy at Arizona State University supported by the National Science Foundation under Grant DMR-9115680. The work at University of Illinois was sponsored by ONR under the direction of M. Yoder. One of us (S.S.) wishes to acknowledge support from an AFOSR Graduate Fellowship.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1995/7/1
Y1 - 1995/7/1
N2 - High-resolution electron microscopy has been used to characterize the microstructure of thin films of GaN, AlN and InN, as grown by plasma-enhanced molecular beam epitaxy. Zincblende and wurtzite polytypes were preferentially nucleated using (001) GaAs and (0001) 6H SiC substrates, respectively. Stacking faults and microtwins along 111 planes dominated the zincblende films, whereas stacking faults along 0002 planes and threading defects originating at the substrate surface were most prevalent in the wurtzite phase. Improved crystal quality was achieved by growing the films on suitable buffer layers.
AB - High-resolution electron microscopy has been used to characterize the microstructure of thin films of GaN, AlN and InN, as grown by plasma-enhanced molecular beam epitaxy. Zincblende and wurtzite polytypes were preferentially nucleated using (001) GaAs and (0001) 6H SiC substrates, respectively. Stacking faults and microtwins along 111 planes dominated the zincblende films, whereas stacking faults along 0002 planes and threading defects originating at the substrate surface were most prevalent in the wurtzite phase. Improved crystal quality was achieved by growing the films on suitable buffer layers.
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U2 - 10.1016/0022-0248(95)00041-0
DO - 10.1016/0022-0248(95)00041-0
M3 - Article
AN - SCOPUS:0029340897
VL - 152
SP - 135
EP - 142
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -