Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates

J. Xie, Y. Fu, Ü Özgür, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt, A. Sagar, R. M. Feenstra, C. K. Inoki, T. S. Kuan, L. Zhou, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiN x and TiN x, porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiN x and SiN x networks (down to ∼10 8 cm -2) compared with the control GaN layers. Both SiN x and TiN x porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably for the layers grown with the use of SiN x and TiN x layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiN x layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiN x and TiN x layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiN x network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiN x mask and conventional lateral overgrowth, are also reported.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6121
DOIs
StatePublished - 2006
EventGallium Nitride Materials and Devices - San Jose, CA, United States
Duration: Jan 23 2006Jan 25 2006

Other

OtherGallium Nitride Materials and Devices
CountryUnited States
CitySan Jose, CA
Period1/23/061/25/06

Fingerprint

Epitaxial films
Photoluminescence
templates
X ray diffraction
Carrier lifetime
Epitaxial layers
Metallorganic chemical vapor deposition
Point defects
Linewidth
Masks
photoluminescence
Impurities
Transmission electron microscopy
Cracks
Temperature
Defects
carrier lifetime
diffraction
point defects
metalorganic chemical vapor deposition

Keywords

  • Dislocation
  • GaN
  • MOCVD
  • Porous Network
  • SEM
  • SiN
  • TEM
  • TiN
  • TPRL
  • XRD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Xie, J., Fu, Y., Özgür, Ü., Moon, Y. T., Yun, F., Morkoç, H., ... Smith, D. (2006). Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6121). [61210B] https://doi.org/10.1117/12.646858

Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates. / Xie, J.; Fu, Y.; Özgür, Ü; Moon, Y. T.; Yun, F.; Morkoç, H.; Everitt, H. O.; Sagar, A.; Feenstra, R. M.; Inoki, C. K.; Kuan, T. S.; Zhou, L.; Smith, David.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6121 2006. 61210B.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xie, J, Fu, Y, Özgür, Ü, Moon, YT, Yun, F, Morkoç, H, Everitt, HO, Sagar, A, Feenstra, RM, Inoki, CK, Kuan, TS, Zhou, L & Smith, D 2006, Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6121, 61210B, Gallium Nitride Materials and Devices, San Jose, CA, United States, 1/23/06. https://doi.org/10.1117/12.646858
Xie J, Fu Y, Özgür Ü, Moon YT, Yun F, Morkoç H et al. Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6121. 2006. 61210B https://doi.org/10.1117/12.646858
Xie, J. ; Fu, Y. ; Özgür, Ü ; Moon, Y. T. ; Yun, F. ; Morkoç, H. ; Everitt, H. O. ; Sagar, A. ; Feenstra, R. M. ; Inoki, C. K. ; Kuan, T. S. ; Zhou, L. ; Smith, David. / Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6121 2006.
@inproceedings{8e719179a3c04e1396b5f4c43558ea5e,
title = "Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates",
abstract = "We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiN x and TiN x, porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiN x and SiN x networks (down to ∼10 8 cm -2) compared with the control GaN layers. Both SiN x and TiN x porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably for the layers grown with the use of SiN x and TiN x layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiN x layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiN x and TiN x layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiN x network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiN x mask and conventional lateral overgrowth, are also reported.",
keywords = "Dislocation, GaN, MOCVD, Porous Network, SEM, SiN, TEM, TiN, TPRL, XRD",
author = "J. Xie and Y. Fu and {\"U} {\"O}zg{\"u}r and Moon, {Y. T.} and F. Yun and H. Morko{\cc} and Everitt, {H. O.} and A. Sagar and Feenstra, {R. M.} and Inoki, {C. K.} and Kuan, {T. S.} and L. Zhou and David Smith",
year = "2006",
doi = "10.1117/12.646858",
language = "English (US)",
isbn = "0819461636",
volume = "6121",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Characterization of GaN epitaxial films grown on SiN x and TiN x porous network templates

AU - Xie, J.

AU - Fu, Y.

AU - Özgür, Ü

AU - Moon, Y. T.

AU - Yun, F.

AU - Morkoç, H.

AU - Everitt, H. O.

AU - Sagar, A.

AU - Feenstra, R. M.

AU - Inoki, C. K.

AU - Kuan, T. S.

AU - Zhou, L.

AU - Smith, David

PY - 2006

Y1 - 2006

N2 - We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiN x and TiN x, porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiN x and SiN x networks (down to ∼10 8 cm -2) compared with the control GaN layers. Both SiN x and TiN x porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably for the layers grown with the use of SiN x and TiN x layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiN x layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiN x and TiN x layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiN x network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiN x mask and conventional lateral overgrowth, are also reported.

AB - We report on the structural, electrical, and optical characterization of GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on SiN x and TiN x, porous templates in order to reduce the density of extended defects. Observations by transmission electron microscopy (TEM) indicate an order of magnitude reduction in the dislocation density in GaN layers grown on TiN x and SiN x networks (down to ∼10 8 cm -2) compared with the control GaN layers. Both SiN x and TiN x porous network structures are found to be effective in blocking the threading dislocation from penetrating into the upper layer. Supporting these findings are the results from X-Ray diffraction and low temperature photoluminescence (PL) measurements. The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably for the layers grown with the use of SiN x and TiN x layers, which generally suggests the reduction of edge and mixed threading dislocations. In general, further improvement is observed with the addition of a second SiN x layer. The room temperature decay times obtained from biexponential fits to time-resolved photoluminescence (TRPL) data are increased with the inclusion of SiN x and TiN x layers. TRPL results suggest that primarily point-defect and impurity-related nonradiative centers are responsible for reducing the lifetime. The carrier lifetime of 1.86 ns measured for a TiN x network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN. Results on samples grown by a new technique called crack-assisted lateral overgrowth, which combines in situ deposition of SiN x mask and conventional lateral overgrowth, are also reported.

KW - Dislocation

KW - GaN

KW - MOCVD

KW - Porous Network

KW - SEM

KW - SiN

KW - TEM

KW - TiN

KW - TPRL

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=33646678934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646678934&partnerID=8YFLogxK

U2 - 10.1117/12.646858

DO - 10.1117/12.646858

M3 - Conference contribution

AN - SCOPUS:33646678934

SN - 0819461636

SN - 9780819461636

VL - 6121

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -