Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors

Engineering & Materials Science

• MOS capacitors 100%
• Interface states 97%
• Phosphorus 77%
• Nitrogen 59%
• Glass 28%
• Nitrogen plasma 12%
• Passivation 8%
• Temperature 8%
• Annealing 7%
• Semiconductor materials 6%
• Silicon 5%

Physics & Astronomy

• phosphorus 62%
• capacitors 55%
• nitrogen 46%
• characterization 35%
• glass 15%
• nitrogen plasma 6%
• room temperature 5%
• electrical impedance 5%
• absorption cross sections 5%
• time constant 5%
• passivity 4%
• field effect transistors 4%
• frequency ranges 4%
• low frequencies 3%
• shift 3%
• annealing 3%
• silicon 2%
• energy 1%

Chemical Compounds

• Interface State 98%
• Capacitor 65%
• Phosphosilicate Glass 40%
• Point Group C∞V 12%
• Ambient Reaction Temperature 8%
• Chemical Passivation 8%
• Conductance 7%
• Annealing 6%
• Compound Mobility 6%
• Time 5%
• Energy 3%