Characterization of epitaxially grown indium islands on Si(111)

Chad Lunceford, Jeffery Drucker

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3 Scopus citations

Abstract

Indium deposition onto on-axis Si(111) substrates and those miscut by 2.5°toward [11 2 ] was investigated. The Si substrates were held at temperatures ranging from room temperature up to 475°C and the In deposition rate was varied by a factor of ∼20. All depositions were performed under ultrahigh vacuum conditions onto surfaces that were cleaned in situ. For growth at 100°C and room temperature, the In films organize into three-dimensional islands. This result suggests that In deposition onto on-axis or miscut Si(111) substrates at temperatures lower than the In melting point of 157°C is a viable route to form In seeds for epitaxial Si or Ge nanowire growth using the vapor-liquid-solid method. The morphology of the resultant island ensembles and their formation mechanisms are discussed.

Original languageEnglish (US)
Article number061509
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume30
Issue number6
DOIs
StatePublished - Nov 1 2012

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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