Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures

Ronald L. Pease, Dale G. Platteter, G. W. Dunham, J. E. Seiler, Hugh Barnaby, R. D. Schrimpf, Marty R. Shaneyfelt, M. C. Maher, R. N. Nowlin

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nit) densities. The buildup of Not and Nit with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N it and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.

Original languageEnglish (US)
Pages (from-to)3773-3780
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 II
DOIs
StatePublished - Dec 2004
Externally publishedYes

Fingerprint

Passivation
Transistors
transistors
dosage
Electric potential
Irradiation
Degradation
Glass
Oxides
Bipolar transistors
passivity
Nitrides
Dosimetry
electric potential
Networks (circuits)
linear circuits
traps
degradation
irradiation
oxides

Keywords

  • Enhanced low dose rate sensitivity (ELDRS)
  • P-glass/nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures. / Pease, Ronald L.; Platteter, Dale G.; Dunham, G. W.; Seiler, J. E.; Barnaby, Hugh; Schrimpf, R. D.; Shaneyfelt, Marty R.; Maher, M. C.; Nowlin, R. N.

In: IEEE Transactions on Nuclear Science, Vol. 51, No. 6 II, 12.2004, p. 3773-3780.

Research output: Contribution to journalArticle

Pease, RL, Platteter, DG, Dunham, GW, Seiler, JE, Barnaby, H, Schrimpf, RD, Shaneyfelt, MR, Maher, MC & Nowlin, RN 2004, 'Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures', IEEE Transactions on Nuclear Science, vol. 51, no. 6 II, pp. 3773-3780. https://doi.org/10.1109/TNS.2004.839258
Pease, Ronald L. ; Platteter, Dale G. ; Dunham, G. W. ; Seiler, J. E. ; Barnaby, Hugh ; Schrimpf, R. D. ; Shaneyfelt, Marty R. ; Maher, M. C. ; Nowlin, R. N. / Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures. In: IEEE Transactions on Nuclear Science. 2004 ; Vol. 51, No. 6 II. pp. 3773-3780.
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