Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures

Ronald L. Pease; Dale G. Platteter; G. W. Dunham; J. E. Seiler; H. J. Barnaby; R. D. Schrimpf; Marty R. Shaneyfelt; M. C. Maher; R. N. Nowlin

doi:10.1109/TNS.2004.839258

Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures

Ronald L. Pease, Dale G. Platteter, G. W. Dunham, J. E. Seiler, H. J. Barnaby, R. D. Schrimpf, Marty R. Shaneyfelt, M. C. Maher, R. N. Nowlin

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75 Scopus citations

Abstract

The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (N_ot) and interface trap (N_it) densities. The buildup of N_ot and N_it with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N _it and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.

Original language	English (US)
Pages (from-to)	3773-3780
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	51
Issue number	6 II
DOIs	https://doi.org/10.1109/TNS.2004.839258
State	Published - Dec 2004
Externally published	Yes

Keywords

Enhanced low dose rate sensitivity (ELDRS)
P-glass/nitride

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2004.839258

Cite this

@article{4b2eb97460424488a4aa1b58c810c7d9,

title = "Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures",

abstract = "The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nit) densities. The buildup of Not and Nit with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N it and the {"}true{"} low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.",

keywords = "Enhanced low dose rate sensitivity (ELDRS), P-glass/nitride",

author = "Pease, {Ronald L.} and Platteter, {Dale G.} and Dunham, {G. W.} and Seiler, {J. E.} and Barnaby, {H. J.} and Schrimpf, {R. D.} and Shaneyfelt, {Marty R.} and Maher, {M. C.} and Nowlin, {R. N.}",

note = "Funding Information: Manuscript received June 1, 2004; revised September 1, 2004. This work was supported by the Defense Threat Reduction Agency (DTRA) under Contract N00164-02-D-6599, DTRA IACRO #04-4021, and the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract DE-AC04-94AL85000. R. L. Pease is with the RLP Research, Los Lunas, NM 87031 USA (e-mail: rpease@mrcmicroe.com). D. G. Platteter, G. W. Dunham, and J. E. Seiler, are with the NAVSEA Crane, Crane, IN 47522-5001 USA. H. J. Barnaby is with the University of Arizona, Tucson, AZ 85721 USA. R. D. Schrimpf is with the Vanderbilt University, Nashville, TN 37235 USA. M. R. Shaneyfelt is with the Sandia National Laboratories, Albuquerque, NM 87154 USA. M. C. Maher is with the National Semiconductor, South Portland, ME 04106 USA. R. N. Nowlin is with the ATK Mission Research, Albuquerque, NM 87110 USA. Digital Object Identifier 10.1109/TNS.2004.839258",

year = "2004",

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doi = "10.1109/TNS.2004.839258",

language = "English (US)",

volume = "51",

pages = "3773--3780",

journal = "IEEE Transactions on Nuclear Science",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6 II",

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T1 - Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures

AU - Pease, Ronald L.

AU - Platteter, Dale G.

AU - Dunham, G. W.

AU - Seiler, J. E.

AU - Barnaby, H. J.

AU - Schrimpf, R. D.

AU - Shaneyfelt, Marty R.

AU - Maher, M. C.

AU - Nowlin, R. N.

N1 - Funding Information: Manuscript received June 1, 2004; revised September 1, 2004. This work was supported by the Defense Threat Reduction Agency (DTRA) under Contract N00164-02-D-6599, DTRA IACRO #04-4021, and the United States Department of Energy’s National Nuclear Security Administration under Contract DE-AC04-94AL85000. R. L. Pease is with the RLP Research, Los Lunas, NM 87031 USA (e-mail: rpease@mrcmicroe.com). D. G. Platteter, G. W. Dunham, and J. E. Seiler, are with the NAVSEA Crane, Crane, IN 47522-5001 USA. H. J. Barnaby is with the University of Arizona, Tucson, AZ 85721 USA. R. D. Schrimpf is with the Vanderbilt University, Nashville, TN 37235 USA. M. R. Shaneyfelt is with the Sandia National Laboratories, Albuquerque, NM 87154 USA. M. C. Maher is with the National Semiconductor, South Portland, ME 04106 USA. R. N. Nowlin is with the ATK Mission Research, Albuquerque, NM 87110 USA. Digital Object Identifier 10.1109/TNS.2004.839258

PY - 2004/12

Y1 - 2004/12

N2 - The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nit) densities. The buildup of Not and Nit with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N it and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.

AB - The high and low dose rate responses of bipolar transistors in a bipolar linear circuit process technology have been studied with specially designed gated lateral pnp test transistors that allow for the extraction of the oxide trapped charge (Not) and interface trap (Nit) densities. The buildup of Not and Nit with total dose is investigated as a function of the irradiation gate voltage at 39 rad/s and 20 mrad/s for three variations of the final passivation layer (all variations had the same oxide covering the active region of the devices). The three variations in final passivation were selected to exhibit minimal degradation at high and low dose rate (no passivation), significant degradation at high and low dose rate (p-glass/nitride) and enhanced low dose rate sensitivity (ELDRS) (p-glass only). It is shown that the increase in base current is dominated by increased N it and the "true" low dose rate enhancement in the ELDRS parts occurs for zero and negative gate voltage, but is eliminated for large positive gate voltage and elevated temperature irradiation. Implications for ELDRS models are discussed.

KW - Enhanced low dose rate sensitivity (ELDRS)

KW - P-glass/nitride

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 II

ER -

Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures

Abstract

Keywords

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