CHARACTERIZATION OF ELECTRON TRAPS RESULTING FROM OXYGEN PRECIPITATION IN Cz SILICON.

J. Whitfield, C. J. Varker, S. S. Chan, Ray Carpenter, Stephen Krause, S. J. Krause, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

CZ wafers have been heat treated with either a 2 step anneal or a single step anneal. Deep level transient spectroscopy and minority carrier lifetime measurements were obtained on processed wafers containing diode-capacitor arrays. Wafers from the seed end of the crystal with the 2 step anneal showed 2 electron traps E1, and E2; the dominant trap E1 is shown to correlate with generation lifetime. Wafers implanted with oxygen at 400 keV or 3. 5 MeV with doses of 3 multiplied by 10**1**5 and 1 multiplied by 10**1**6 atoms cm** minus **2 with similar heat treatments reveal electron traps with the same energies as those observed in the unimplanted samples. The high dose samples show a much more complicated spectra, in which E1 and E2 are present. TEM analysis of the seed end unimplanted samples with 2 step anneal show plate type precipitates with punched out loops and dislocations. The tang-end showed octahedral precipitates. The cross sectional view of the implanted samples reveal the precipitates and dislocation loops in a well defined layer.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDevendra K. Sadana, Michael I. Current
Place of PublicationBellingham, WA, USA
PublisherSPIE
Pages83-90
Number of pages8
Volume623
ISBN (Print)0892526580
StatePublished - 1986

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Whitfield, J., Varker, C. J., Chan, S. S., Carpenter, R., Krause, S., Krause, S. J., & Weber, E. R. (1986). CHARACTERIZATION OF ELECTRON TRAPS RESULTING FROM OXYGEN PRECIPITATION IN Cz SILICON. In D. K. Sadana, & M. I. Current (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 623, pp. 83-90). SPIE.