Characterization of EL2 in annealed LT-GaAs

N. D. Jager, P. Dreszer, Nathan Newman, A. K. Verma, Z. Liliental-Weber, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Scopus citations

Abstract

Nonstoichiometric arsenic-rich GaAs grown at low temperatures by mbe (LT-GaAs) has been found to be semi-insulating after high-temperature annealing. The origin of this technologically important conversion is not yet fully understood. In order to study this effect, we performed photocurrent measurements on p-LT GaAs-n diodes in the spectral range between 0.75 eV and 1.5 eV. Thereby, we characterized EL2-like defects in annealed LT-GaAs.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages1599-1604
Number of pages6
Volume143-4
Editionpt 3
StatePublished - 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

Other

OtherProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
CityGmunden, Austria
Period7/18/937/23/93

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Jager, N. D., Dreszer, P., Newman, N., Verma, A. K., Liliental-Weber, Z., & Weber, E. R. (1994). Characterization of EL2 in annealed LT-GaAs. In Materials Science Forum (pt 3 ed., Vol. 143-4, pp. 1599-1604). Trans Tech Publ.