Characterization of EL2 in annealed LT-GaAs

N. D. Jager, P. Dreszer, Nathan Newman, A. K. Verma, Z. Liliental-Weber, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Citations (Scopus)

Abstract

Nonstoichiometric arsenic-rich GaAs grown at low temperatures by mbe (LT-GaAs) has been found to be semi-insulating after high-temperature annealing. The origin of this technologically important conversion is not yet fully understood. In order to study this effect, we performed photocurrent measurements on p-LT GaAs-n diodes in the spectral range between 0.75 eV and 1.5 eV. Thereby, we characterized EL2-like defects in annealed LT-GaAs.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages1599-1604
Number of pages6
Volume143-4
Editionpt 3
StatePublished - 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

Other

OtherProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
CityGmunden, Austria
Period7/18/937/23/93

Fingerprint

Arsenic
Photocurrents
Diodes
Annealing
Temperature
Defects
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Jager, N. D., Dreszer, P., Newman, N., Verma, A. K., Liliental-Weber, Z., & Weber, E. R. (1994). Characterization of EL2 in annealed LT-GaAs. In Materials Science Forum (pt 3 ed., Vol. 143-4, pp. 1599-1604). Trans Tech Publ.

Characterization of EL2 in annealed LT-GaAs. / Jager, N. D.; Dreszer, P.; Newman, Nathan; Verma, A. K.; Liliental-Weber, Z.; Weber, E. R.

Materials Science Forum. Vol. 143-4 pt 3. ed. Trans Tech Publ, 1994. p. 1599-1604.

Research output: Chapter in Book/Report/Conference proceedingChapter

Jager, ND, Dreszer, P, Newman, N, Verma, AK, Liliental-Weber, Z & Weber, ER 1994, Characterization of EL2 in annealed LT-GaAs. in Materials Science Forum. pt 3 edn, vol. 143-4, Trans Tech Publ, pp. 1599-1604, Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3), Gmunden, Austria, 7/18/93.
Jager ND, Dreszer P, Newman N, Verma AK, Liliental-Weber Z, Weber ER. Characterization of EL2 in annealed LT-GaAs. In Materials Science Forum. pt 3 ed. Vol. 143-4. Trans Tech Publ. 1994. p. 1599-1604
Jager, N. D. ; Dreszer, P. ; Newman, Nathan ; Verma, A. K. ; Liliental-Weber, Z. ; Weber, E. R. / Characterization of EL2 in annealed LT-GaAs. Materials Science Forum. Vol. 143-4 pt 3. ed. Trans Tech Publ, 1994. pp. 1599-1604
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