Abstract
Nonstoichiometric arsenic-rich GaAs grown at low temperatures by mbe (LT-GaAs) has been found to be semi-insulating after high-temperature annealing. The origin of this technologically important conversion is not yet fully understood. In order to study this effect, we performed photocurrent measurements on p-LT GaAs-n diodes in the spectral range between 0.75 eV and 1.5 eV. Thereby, we characterized EL2-like defects in annealed LT-GaAs.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publ |
| Pages | 1599-1604 |
| Number of pages | 6 |
| Volume | 143-4 |
| Edition | pt 3 |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993 |
Other
| Other | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) |
|---|---|
| City | Gmunden, Austria |
| Period | 7/18/93 → 7/23/93 |
ASJC Scopus subject areas
- General Materials Science