Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

F. A. Ponce, D. Cherns, W. T. Young, J. W. Steeds

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Abstract

A combination of transmission electron microscopy imaging and diffraction techniques is used to characterize crystal defects in homoepitaxial GaN thin films. The Burgers vectors of dislocations is established by combining large-angle convergent beam electron diffraction and conventional diffraction contrast techniques. It is shown that dislocations with Burgers vectors c, a, and c+a are present. Evidence is presented that dislocation segments lying in the interfacial plane are dissociated on a fine scale. The significance of the observations for understanding homoepitaxial growth of GaN is discussed.

Original languageEnglish (US)
Pages (from-to)770-772
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number6
DOIs
StatePublished - Aug 5 1996

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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