CHARACTERIZATION OF DISLOCATIONS AND INTERFACES IN SEMICONDUCTORS BY HIGH RESOLUTION ELECTRON MICROSCOPY.

J. C.H. Spence, A. Olsen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationMat Res Soc Symp Proc
Pages279-284
Number of pages6
StatePublished - Dec 1 1981
Externally publishedYes

Publication series

NameMat Res Soc Symp Proc

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Spence, J. C. H., & Olsen, A. (1981). CHARACTERIZATION OF DISLOCATIONS AND INTERFACES IN SEMICONDUCTORS BY HIGH RESOLUTION ELECTRON MICROSCOPY. In Mat Res Soc Symp Proc (pp. 279-284). (Mat Res Soc Symp Proc).