CHARACTERIZATION OF DISLOCATIONS AND INTERFACES IN SEMICONDUCTORS BY HIGH RESOLUTION ELECTRON MICROSCOPY.

John Spence, A. Olsen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationMat Res Soc Symp Proc
Pages279-284
Number of pages6
StatePublished - 1981
Externally publishedYes

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High resolution electron microscopy
Dislocations (crystals)
Electron microscopy
Diffraction
Semiconductor materials
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

CHARACTERIZATION OF DISLOCATIONS AND INTERFACES IN SEMICONDUCTORS BY HIGH RESOLUTION ELECTRON MICROSCOPY. / Spence, John; Olsen, A.

Mat Res Soc Symp Proc. 1981. p. 279-284.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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author = "John Spence and A. Olsen",
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