Abstract
N-type doping of cuprous oxide (Cu2O) films by chlorine (Cl) during electrodeposition was reported by the authors recently. A more detailed study on the effects of doping conditions on electrical properties of Cl-doped Cu2O is presented in this paper. The resistivity of Cl-doped Cu 2O is affected by doping conditions, including Cu and Cl concentrations, different Cu and Cl precursors, complexing agent concentration, solution pH, and deposition temperature. It is believed that these conditions control the amount of Cl incorporated into the Cu2O films, thus the doping level. The lowest resistivity obtained so far is 7 Ω-cm, suitable for solar cell applications. Photocurrent-potential measurements verify the n-type conductivity of Cl-doped Cu2O. Scanning electron microscopy indicates a small grain size of around 100 nm in Cl-doped Cu2O. X-ray diffraction confirms Cu2O as the only detectable phase in the film.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 5363-5367 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 19 |
| DOIs | |
| State | Published - Jul 30 2010 |
| Externally published | Yes |
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Keywords
- Chlorine
- Copper oxide
- Doping
- Electrodeposition
- N-type
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Characterization of Cl-doped n-type Cu2O prepared by electrodeposition. / Han, Xiaofei; Han, Kunhee; Tao, Meng.
In: Thin Solid Films, Vol. 518, No. 19, 30.07.2010, p. 5363-5367.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of Cl-doped n-type Cu2O prepared by electrodeposition
AU - Han, Xiaofei
AU - Han, Kunhee
AU - Tao, Meng
PY - 2010/7/30
Y1 - 2010/7/30
N2 - N-type doping of cuprous oxide (Cu2O) films by chlorine (Cl) during electrodeposition was reported by the authors recently. A more detailed study on the effects of doping conditions on electrical properties of Cl-doped Cu2O is presented in this paper. The resistivity of Cl-doped Cu 2O is affected by doping conditions, including Cu and Cl concentrations, different Cu and Cl precursors, complexing agent concentration, solution pH, and deposition temperature. It is believed that these conditions control the amount of Cl incorporated into the Cu2O films, thus the doping level. The lowest resistivity obtained so far is 7 Ω-cm, suitable for solar cell applications. Photocurrent-potential measurements verify the n-type conductivity of Cl-doped Cu2O. Scanning electron microscopy indicates a small grain size of around 100 nm in Cl-doped Cu2O. X-ray diffraction confirms Cu2O as the only detectable phase in the film.
AB - N-type doping of cuprous oxide (Cu2O) films by chlorine (Cl) during electrodeposition was reported by the authors recently. A more detailed study on the effects of doping conditions on electrical properties of Cl-doped Cu2O is presented in this paper. The resistivity of Cl-doped Cu 2O is affected by doping conditions, including Cu and Cl concentrations, different Cu and Cl precursors, complexing agent concentration, solution pH, and deposition temperature. It is believed that these conditions control the amount of Cl incorporated into the Cu2O films, thus the doping level. The lowest resistivity obtained so far is 7 Ω-cm, suitable for solar cell applications. Photocurrent-potential measurements verify the n-type conductivity of Cl-doped Cu2O. Scanning electron microscopy indicates a small grain size of around 100 nm in Cl-doped Cu2O. X-ray diffraction confirms Cu2O as the only detectable phase in the film.
KW - Chlorine
KW - Copper oxide
KW - Doping
KW - Electrodeposition
KW - N-type
UR - http://www.scopus.com/inward/record.url?scp=77955662944&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955662944&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.03.085
DO - 10.1016/j.tsf.2010.03.085
M3 - Article
VL - 518
SP - 5363
EP - 5367
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 19
ER -