Characterization of charging in semiconductor device materials by electron holography

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.

Original languageEnglish (US)
Pages (from-to)239-242
Number of pages4
JournalJournal of Electron Microscopy
Volume54
Issue number3
DOIs
StatePublished - Jun 2005

Fingerprint

Holography
Electron holography
Semiconductors
Phase measurement
Silicon oxides
Liquid nitrogen
Semiconductor devices
Electric breakdown
semiconductor devices
holography
Oxide films
charging
Electrostatics
Electron microscopes
Electric fields
insulators
Electrons
Equipment and Supplies
Coatings
Carbon

Keywords

  • Breakdown voltage
  • Charging
  • Electron holography
  • Electrostatic potential
  • Semiconductor device

ASJC Scopus subject areas

  • Instrumentation

Cite this

Characterization of charging in semiconductor device materials by electron holography. / McCartney, Martha.

In: Journal of Electron Microscopy, Vol. 54, No. 3, 06.2005, p. 239-242.

Research output: Contribution to journalArticle

@article{0c9de514963545deb943f0e531e835cb,
title = "Characterization of charging in semiconductor device materials by electron holography",
abstract = "Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.",
keywords = "Breakdown voltage, Charging, Electron holography, Electrostatic potential, Semiconductor device",
author = "Martha McCartney",
year = "2005",
month = "6",
doi = "10.1093/jmicro/54.3.239",
language = "English (US)",
volume = "54",
pages = "239--242",
journal = "Microscopy (Oxford, England)",
issn = "2050-5698",
publisher = "Japanese Society of Microscopy",
number = "3",

}

TY - JOUR

T1 - Characterization of charging in semiconductor device materials by electron holography

AU - McCartney, Martha

PY - 2005/6

Y1 - 2005/6

N2 - Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.

AB - Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.

KW - Breakdown voltage

KW - Charging

KW - Electron holography

KW - Electrostatic potential

KW - Semiconductor device

UR - http://www.scopus.com/inward/record.url?scp=27744505942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744505942&partnerID=8YFLogxK

U2 - 10.1093/jmicro/54.3.239

DO - 10.1093/jmicro/54.3.239

M3 - Article

C2 - 16275780

AN - SCOPUS:27744505942

VL - 54

SP - 239

EP - 242

JO - Microscopy (Oxford, England)

JF - Microscopy (Oxford, England)

SN - 2050-5698

IS - 3

ER -