Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates

Xinyu Liu; David Smith; Helin Cao; Yong P. Chen; Jin Fan; Yong-Hang Zhang; Richard E. Pimpinella; Malgorzata Dobrowolska; Jacek K. Furdyna

doi:10.1116/1.3668082

Characterization of Bi₂Te₃ and Bi₂Se ₃ topological insulators grown by MBE on (001) GaAs substrates

Xinyu Liu, David Smith, Helin Cao, Yong P. Chen, Jin Fan, Yong-Hang Zhang, Richard E. Pimpinella, Malgorzata Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Films of pseudohexagonal Bi₂Te₃, Bi ₂Se₃ and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.

Original language	English (US)
Article number	02B103
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3668082
State	Published - Mar 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates",

abstract = "Films of pseudohexagonal Bi2Te3, Bi 2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.",

author = "Xinyu Liu and David Smith and Helin Cao and Chen, {Yong P.} and Jin Fan and Yong-Hang Zhang and Pimpinella, {Richard E.} and Malgorzata Dobrowolska and Furdyna, {Jacek K.}",

note = "Funding Information: This work was supported by NSF Grant No. DMR10-05851 (ND); NSF Grant No. ECCS10-02114 and an AFOSR Grant No. FA9550-10-1-0129 (ASU); and DARPA MESO program (Purdue). The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2012",

month = mar,

doi = "10.1116/1.3668082",

language = "English (US)",

volume = "30",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

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TY - JOUR

T1 - Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates

AU - Liu, Xinyu

AU - Smith, David

AU - Cao, Helin

AU - Chen, Yong P.

AU - Fan, Jin

AU - Zhang, Yong-Hang

AU - Pimpinella, Richard E.

AU - Dobrowolska, Malgorzata

AU - Furdyna, Jacek K.

N1 - Funding Information: This work was supported by NSF Grant No. DMR10-05851 (ND); NSF Grant No. ECCS10-02114 and an AFOSR Grant No. FA9550-10-1-0129 (ASU); and DARPA MESO program (Purdue). The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2012/3

Y1 - 2012/3

N2 - Films of pseudohexagonal Bi2Te3, Bi 2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.

AB - Films of pseudohexagonal Bi2Te3, Bi 2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.

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IS - 2

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ER -

Characterization of Bi₂Te₃ and Bi₂Se ₃ topological insulators grown by MBE on (001) GaAs substrates

Abstract

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