Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation

D. L. Mathine; G. N. Maracas; D. S. Gerber; R. Droopad; R. J. Graham; Martha McCartney

doi:10.1063/1.357013

Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation

D. L. Mathine, G. N. Maracas, D. S. Gerber, R. Droopad, R. J. Graham, Martha McCartney

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Abstract

An asymmetric triangular quantum well was grown by molecular-beam epitaxy using a digital alloy composition grading method. A high-resolution electron micrograph (HREM), a computational model, and room-temperature photoluminescence were used to extract the spatial compositional dependence of the quantum well. The HREM micrograph intensity profile was used to determine the shape of the quantum well. A Fourier series method for solving the BenDaniel-Duke Hamiltonian [D. J. BenDaniel and C. B. Duke, Phys. Rev. 152, 683 (1966)] was then used to calculate the bound energy states within the envelope function scheme for the measured well shape. These calculations were compared to the E_11h, E_11l, and E_22l transitions in the room-temperature photoluminescence and provided a self-consistent compositional profile for the quantum well. A comparison of energy levels with a linearly graded well is also presented.

Original language	English (US)
Pages (from-to)	4551-4556
Number of pages	6
Journal	Journal of Applied Physics
Volume	75
Issue number	9
DOIs	https://doi.org/10.1063/1.357013
State	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.357013

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title = "Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation",

abstract = "An asymmetric triangular quantum well was grown by molecular-beam epitaxy using a digital alloy composition grading method. A high-resolution electron micrograph (HREM), a computational model, and room-temperature photoluminescence were used to extract the spatial compositional dependence of the quantum well. The HREM micrograph intensity profile was used to determine the shape of the quantum well. A Fourier series method for solving the BenDaniel-Duke Hamiltonian [D. J. BenDaniel and C. B. Duke, Phys. Rev. 152, 683 (1966)] was then used to calculate the bound energy states within the envelope function scheme for the measured well shape. These calculations were compared to the E11h, E11l, and E22l transitions in the room-temperature photoluminescence and provided a self-consistent compositional profile for the quantum well. A comparison of energy levels with a linearly graded well is also presented.",

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AU - Mathine, D. L.

AU - Maracas, G. N.

AU - Gerber, D. S.

AU - Droopad, R.

AU - Graham, R. J.

AU - McCartney, Martha

PY - 1994/12/1

Y1 - 1994/12/1

N2 - An asymmetric triangular quantum well was grown by molecular-beam epitaxy using a digital alloy composition grading method. A high-resolution electron micrograph (HREM), a computational model, and room-temperature photoluminescence were used to extract the spatial compositional dependence of the quantum well. The HREM micrograph intensity profile was used to determine the shape of the quantum well. A Fourier series method for solving the BenDaniel-Duke Hamiltonian [D. J. BenDaniel and C. B. Duke, Phys. Rev. 152, 683 (1966)] was then used to calculate the bound energy states within the envelope function scheme for the measured well shape. These calculations were compared to the E11h, E11l, and E22l transitions in the room-temperature photoluminescence and provided a self-consistent compositional profile for the quantum well. A comparison of energy levels with a linearly graded well is also presented.

AB - An asymmetric triangular quantum well was grown by molecular-beam epitaxy using a digital alloy composition grading method. A high-resolution electron micrograph (HREM), a computational model, and room-temperature photoluminescence were used to extract the spatial compositional dependence of the quantum well. The HREM micrograph intensity profile was used to determine the shape of the quantum well. A Fourier series method for solving the BenDaniel-Duke Hamiltonian [D. J. BenDaniel and C. B. Duke, Phys. Rev. 152, 683 (1966)] was then used to calculate the bound energy states within the envelope function scheme for the measured well shape. These calculations were compared to the E11h, E11l, and E22l transitions in the room-temperature photoluminescence and provided a self-consistent compositional profile for the quantum well. A comparison of energy levels with a linearly graded well is also presented.

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Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation

Abstract

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