Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation

Hai Feng Zhang, Arunodoy Saha, Wen Cheng Sun, Meng Tao

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Chemical vapor deposition-based sulfur passivation using hydrogen sulfide is carried out on both n-type and p-type Si(100) wafers. Al contacts are fabricated on sulfur-passivated Si(100) wafers and the resultant Schottky barriers are characterized with current-voltage (I-V), capacitance-voltage (C-V) and activation-energy methods. Al/S-passivated n-type Si(100) junctions exhibit ohmic behavior with a barrier height of <0.078 eV by the I-V method and significantly lower than 0.08 eV by the activation-energy method. For Al/S-passivated p-type Si(100) junctions, the barrier height is ∼0.77 eV by I-V and activation-energy methods and 1.14 eV by the C-V method. The discrepancy between C-V and other methods is explained by image force-induced barrier lowering and edge-leakage current. The I-V behavior of an Al/S-passivated p-type Si(100) junction remains largely unchanged after 300 °C annealing in air. It is also discovered that heating the S-passivated Si(100) wafer before Al deposition significantly improves the thermal stability of an Al/S-passivated n-type Si(100) junction to 500 °C.

Original languageEnglish (US)
Pages (from-to)2031-2038
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume116
Issue number4
DOIs
StatePublished - 2014

Fingerprint

Sulfur
Passivation
passivity
energy methods
Chemical vapor deposition
sulfur
vapor deposition
wafers
Capacitance
Activation energy
capacitance
Electric potential
electric potential
activation energy
Hydrogen Sulfide
hydrogen sulfide
Hydrogen sulfide
Leakage currents
Thermodynamic stability
leakage

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation. / Zhang, Hai Feng; Saha, Arunodoy; Sun, Wen Cheng; Tao, Meng.

In: Applied Physics A: Materials Science and Processing, Vol. 116, No. 4, 2014, p. 2031-2038.

Research output: Contribution to journalArticle

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