Abstract
Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1395-1397 |
| Number of pages | 3 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 290-291 PART 2 |
| DOIs | |
| State | Published - Apr 2005 |
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Keywords
- Dilute magnetic semiconductor
- Ferromagnetism
- MBE
- Microstructure
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors. / Gu, Lin; Wu, Stephen Y.; Liu, H. X.; Singh, Rakesh; Newman, Nathan; Smith, David.
In: Journal of Magnetism and Magnetic Materials, Vol. 290-291 PART 2, 04.2005, p. 1395-1397.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors
AU - Gu, Lin
AU - Wu, Stephen Y.
AU - Liu, H. X.
AU - Singh, Rakesh
AU - Newman, Nathan
AU - Smith, David
PY - 2005/4
Y1 - 2005/4
N2 - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.
AB - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.
KW - Dilute magnetic semiconductor
KW - Ferromagnetism
KW - MBE
KW - Microstructure
UR - http://www.scopus.com/inward/record.url?scp=14944341707&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=14944341707&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2004.11.446
DO - 10.1016/j.jmmm.2004.11.446
M3 - Article
VL - 290-291 PART 2
SP - 1395
EP - 1397
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
ER -