Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

Lin Gu; Stephen Y. Wu; H. X. Liu; Rakesh Singh; Nathan Newman; David Smith

doi:10.1016/j.jmmm.2004.11.446

Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

Lin Gu, Stephen Y. Wu, H. X. Liu, Rakesh Singh, Nathan Newman, David Smith

Research output: Contribution to journal › Article

79 Scopus citations

Abstract

Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

Original language	English (US)
Pages (from-to)	1395-1397
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	290-291 PART 2
DOIs	https://doi.org/10.1016/j.jmmm.2004.11.446
State	Published - Apr 1 2005

Keywords

Dilute magnetic semiconductor
Ferromagnetism
MBE
Microstructure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Gu, L., Wu, S. Y., Liu, H. X., Singh, R., Newman, N., & Smith, D. (2005). Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors. Journal of Magnetism and Magnetic Materials, 290-291 PART 2, 1395-1397. https://doi.org/10.1016/j.jmmm.2004.11.446

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abstract = "Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.",

keywords = "Dilute magnetic semiconductor, Ferromagnetism, MBE, Microstructure",

author = "Lin Gu and Wu, {Stephen Y.} and Liu, {H. X.} and Rakesh Singh and Nathan Newman and David Smith",

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doi = "10.1016/j.jmmm.2004.11.446",

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T1 - Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

AU - Gu, Lin

AU - Wu, Stephen Y.

AU - Liu, H. X.

AU - Singh, Rakesh

AU - Newman, Nathan

AU - Smith, David

PY - 2005/4/1

Y1 - 2005/4/1

N2 - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

AB - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

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KW - Ferromagnetism

KW - MBE

KW - Microstructure

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