Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

Lin Gu; Stephen Y. Wu; H. X. Liu; Rakesh Singh; Nathan Newman; David Smith

doi:10.1016/j.jmmm.2004.11.446

Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

Lin Gu, Stephen Y. Wu, H. X. Liu, Rakesh Singh, Nathan Newman, David Smith

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

Original language	English (US)
Pages (from-to)	1395-1397
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	290-291 PART 2
DOIs	https://doi.org/10.1016/j.jmmm.2004.11.446
State	Published - Apr 2005

Keywords

Dilute magnetic semiconductor
Ferromagnetism
MBE
Microstructure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2004.11.446

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@article{a1598b8746304491b85f198e3750b32a,

title = "Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors",

abstract = "Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.",

keywords = "Dilute magnetic semiconductor, Ferromagnetism, MBE, Microstructure",

author = "Lin Gu and Wu, {Stephen Y.} and Liu, {H. X.} and Rakesh Singh and Nathan Newman and David Smith",

note = "Funding Information: This work was supported by the Defense Advanced Research Projects Agency and administered by the Office of Naval Research (Contract No. N00014-02-1-0598). We acknowledge use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy of Arizona State Univeristy.",

year = "2005",

month = apr,

doi = "10.1016/j.jmmm.2004.11.446",

language = "English (US)",

volume = "290-291 PART 2",

pages = "1395--1397",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

}

TY - JOUR

T1 - Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

AU - Gu, Lin

AU - Wu, Stephen Y.

AU - Liu, H. X.

AU - Singh, Rakesh

AU - Newman, Nathan

AU - Smith, David

N1 - Funding Information: This work was supported by the Defense Advanced Research Projects Agency and administered by the Office of Naval Research (Contract No. N00014-02-1-0598). We acknowledge use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy of Arizona State Univeristy.

PY - 2005/4

Y1 - 2005/4

N2 - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

AB - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

KW - Dilute magnetic semiconductor

KW - Ferromagnetism

KW - MBE

KW - Microstructure

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U2 - 10.1016/j.jmmm.2004.11.446

DO - 10.1016/j.jmmm.2004.11.446

M3 - Article

AN - SCOPUS:14944341707

VL - 290-291 PART 2

SP - 1395

EP - 1397

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -

Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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