Abstract

Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

Original languageEnglish (US)
Pages (from-to)1395-1397
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume290-291 PART 2
DOIs
StatePublished - Apr 2005

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Magnetic semiconductors
Epilayers
Curie temperature
Molecular beam epitaxy
Electron diffraction
Electron microscopy
crystallinity
electron microscopy
molecular beam epitaxy
electron diffraction
examination
Impurities
Imaging techniques
impurities
Substrates
diffraction
Temperature
temperature
energy

Keywords

  • Dilute magnetic semiconductor
  • Ferromagnetism
  • MBE
  • Microstructure

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors. / Gu, Lin; Wu, Stephen Y.; Liu, H. X.; Singh, Rakesh; Newman, Nathan; Smith, David.

In: Journal of Magnetism and Magnetic Materials, Vol. 290-291 PART 2, 04.2005, p. 1395-1397.

Research output: Contribution to journalArticle

Gu, Lin ; Wu, Stephen Y. ; Liu, H. X. ; Singh, Rakesh ; Newman, Nathan ; Smith, David. / Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors. In: Journal of Magnetism and Magnetic Materials. 2005 ; Vol. 290-291 PART 2. pp. 1395-1397.
@article{a1598b8746304491b85f198e3750b32a,
title = "Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors",
abstract = "Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2{\%}) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.",
keywords = "Dilute magnetic semiconductor, Ferromagnetism, MBE, Microstructure",
author = "Lin Gu and Wu, {Stephen Y.} and Liu, {H. X.} and Rakesh Singh and Nathan Newman and David Smith",
year = "2005",
month = "4",
doi = "10.1016/j.jmmm.2004.11.446",
language = "English (US)",
volume = "290-291 PART 2",
pages = "1395--1397",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

TY - JOUR

T1 - Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

AU - Gu, Lin

AU - Wu, Stephen Y.

AU - Liu, H. X.

AU - Singh, Rakesh

AU - Newman, Nathan

AU - Smith, David

PY - 2005/4

Y1 - 2005/4

N2 - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

AB - Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 °C. Optimized Al(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in Al(Cr)N, whereas very small amounts (∼0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging.

KW - Dilute magnetic semiconductor

KW - Ferromagnetism

KW - MBE

KW - Microstructure

UR - http://www.scopus.com/inward/record.url?scp=14944341707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14944341707&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.11.446

DO - 10.1016/j.jmmm.2004.11.446

M3 - Article

VL - 290-291 PART 2

SP - 1395

EP - 1397

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -