Characterization and modeling of the conduction and switching mechanisms of HfOx based RRAM

Shimeng Yu, H. S.Philip Wong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The conduction and switching mechanism of resistive random access memory (RRAM) is reviewed in this paper. The resistive switching in oxides is generally attributed to the conductive filament (made up of oxygen vacancies) formation and rupture in the oxide due to field assisted oxygen ion migration. As a model system for device physics study, HfOx based RRAM devices were fabricated and characterized. To identify the electron conduction mechanism, various electrical characterization techniques such as I-V measurements at various temperatures, low-frequency noise measurements, and AC conductance measurements were employed. It was suggested that the trap-assisted-tunneling is the dominant conduction mechanism. In order to explore the oxygen ion migration dynamics, pulse switching measurements were performed. An exponential voltage-time relationship was found between the switching time and the applied voltage. To obtain a first-order understanding of the variability of resistive switching, a Kinetic Monte Carlo (KMC) numerical simulator was developed. The generation/recombination/migration probabilities of oxygen vacancies and oxygen ions were calculated, and the conductive filament configuration was updated stochastically according to those probabilities. The KMC simulation can reproduce many experimental observations in the DC I-V sweep, pulse switching, endurance cycling, and retention baking, etc. The tail bits in the resistance distribution are attributed to the oxygen vacancy left over in the gap region due to a competition between the oxygen vacancy generation and recombination. To enable circuit and system development using RRAM, a compact device model was developed. The compact model, implemented in MATLAB, HSPICE, and Verilog-A, which can be employed in many commonly available circuit simulators using the SPICE engine.

Original languageEnglish (US)
JournalEnvironment and Development Economics
Volume1631
Issue number1
DOIs
StatePublished - Feb 10 2014

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oxygen
migration
modeling
physics studies
ions
endurance
system development
recombination
system model
oxides
simulator
ion
oxide
kinetics
simulation
physics
baking
engines
Modeling
rupture

Keywords

  • dielectric properties
  • electrical properties
  • metal-insulator transition

ASJC Scopus subject areas

  • Economics and Econometrics
  • Development
  • Environmental Science(all)

Cite this

Characterization and modeling of the conduction and switching mechanisms of HfOx based RRAM. / Yu, Shimeng; Wong, H. S.Philip.

In: Environment and Development Economics, Vol. 1631, No. 1, 10.02.2014.

Research output: Contribution to journalArticle

@article{9919598c82394c84b76414949bb8da23,
title = "Characterization and modeling of the conduction and switching mechanisms of HfOx based RRAM",
abstract = "The conduction and switching mechanism of resistive random access memory (RRAM) is reviewed in this paper. The resistive switching in oxides is generally attributed to the conductive filament (made up of oxygen vacancies) formation and rupture in the oxide due to field assisted oxygen ion migration. As a model system for device physics study, HfOx based RRAM devices were fabricated and characterized. To identify the electron conduction mechanism, various electrical characterization techniques such as I-V measurements at various temperatures, low-frequency noise measurements, and AC conductance measurements were employed. It was suggested that the trap-assisted-tunneling is the dominant conduction mechanism. In order to explore the oxygen ion migration dynamics, pulse switching measurements were performed. An exponential voltage-time relationship was found between the switching time and the applied voltage. To obtain a first-order understanding of the variability of resistive switching, a Kinetic Monte Carlo (KMC) numerical simulator was developed. The generation/recombination/migration probabilities of oxygen vacancies and oxygen ions were calculated, and the conductive filament configuration was updated stochastically according to those probabilities. The KMC simulation can reproduce many experimental observations in the DC I-V sweep, pulse switching, endurance cycling, and retention baking, etc. The tail bits in the resistance distribution are attributed to the oxygen vacancy left over in the gap region due to a competition between the oxygen vacancy generation and recombination. To enable circuit and system development using RRAM, a compact device model was developed. The compact model, implemented in MATLAB, HSPICE, and Verilog-A, which can be employed in many commonly available circuit simulators using the SPICE engine.",
keywords = "dielectric properties, electrical properties, metal-insulator transition",
author = "Shimeng Yu and Wong, {H. S.Philip}",
year = "2014",
month = "2",
day = "10",
doi = "10.1557/opl.2014.175",
language = "English (US)",
volume = "1631",
journal = "Environment and Development Economics",
issn = "1355-770X",
publisher = "Cambridge University Press",
number = "1",

}

TY - JOUR

T1 - Characterization and modeling of the conduction and switching mechanisms of HfOx based RRAM

AU - Yu, Shimeng

AU - Wong, H. S.Philip

PY - 2014/2/10

Y1 - 2014/2/10

N2 - The conduction and switching mechanism of resistive random access memory (RRAM) is reviewed in this paper. The resistive switching in oxides is generally attributed to the conductive filament (made up of oxygen vacancies) formation and rupture in the oxide due to field assisted oxygen ion migration. As a model system for device physics study, HfOx based RRAM devices were fabricated and characterized. To identify the electron conduction mechanism, various electrical characterization techniques such as I-V measurements at various temperatures, low-frequency noise measurements, and AC conductance measurements were employed. It was suggested that the trap-assisted-tunneling is the dominant conduction mechanism. In order to explore the oxygen ion migration dynamics, pulse switching measurements were performed. An exponential voltage-time relationship was found between the switching time and the applied voltage. To obtain a first-order understanding of the variability of resistive switching, a Kinetic Monte Carlo (KMC) numerical simulator was developed. The generation/recombination/migration probabilities of oxygen vacancies and oxygen ions were calculated, and the conductive filament configuration was updated stochastically according to those probabilities. The KMC simulation can reproduce many experimental observations in the DC I-V sweep, pulse switching, endurance cycling, and retention baking, etc. The tail bits in the resistance distribution are attributed to the oxygen vacancy left over in the gap region due to a competition between the oxygen vacancy generation and recombination. To enable circuit and system development using RRAM, a compact device model was developed. The compact model, implemented in MATLAB, HSPICE, and Verilog-A, which can be employed in many commonly available circuit simulators using the SPICE engine.

AB - The conduction and switching mechanism of resistive random access memory (RRAM) is reviewed in this paper. The resistive switching in oxides is generally attributed to the conductive filament (made up of oxygen vacancies) formation and rupture in the oxide due to field assisted oxygen ion migration. As a model system for device physics study, HfOx based RRAM devices were fabricated and characterized. To identify the electron conduction mechanism, various electrical characterization techniques such as I-V measurements at various temperatures, low-frequency noise measurements, and AC conductance measurements were employed. It was suggested that the trap-assisted-tunneling is the dominant conduction mechanism. In order to explore the oxygen ion migration dynamics, pulse switching measurements were performed. An exponential voltage-time relationship was found between the switching time and the applied voltage. To obtain a first-order understanding of the variability of resistive switching, a Kinetic Monte Carlo (KMC) numerical simulator was developed. The generation/recombination/migration probabilities of oxygen vacancies and oxygen ions were calculated, and the conductive filament configuration was updated stochastically according to those probabilities. The KMC simulation can reproduce many experimental observations in the DC I-V sweep, pulse switching, endurance cycling, and retention baking, etc. The tail bits in the resistance distribution are attributed to the oxygen vacancy left over in the gap region due to a competition between the oxygen vacancy generation and recombination. To enable circuit and system development using RRAM, a compact device model was developed. The compact model, implemented in MATLAB, HSPICE, and Verilog-A, which can be employed in many commonly available circuit simulators using the SPICE engine.

KW - dielectric properties

KW - electrical properties

KW - metal-insulator transition

UR - http://www.scopus.com/inward/record.url?scp=84910151423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84910151423&partnerID=8YFLogxK

U2 - 10.1557/opl.2014.175

DO - 10.1557/opl.2014.175

M3 - Article

VL - 1631

JO - Environment and Development Economics

JF - Environment and Development Economics

SN - 1355-770X

IS - 1

ER -