Abstract

Enhanced voltage silicon metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated on a 45nm SOI CMOS technology with no process changes. MESFETs scaled to L g = 184nm were fabricated and show a peak f T of 35GHz, current drive of 112mA/mm and breakdown voltages exceeding 4.5V whereas the nominal CMOS voltage was less than 1V on the same process. The devices were characterized from DC to 40GHz and an industry standard TOM3 model has been developed describing their operation. A board level Class AB power amplifier operating at 433MHz was designed, fabricated and measured to have a peak output power of 17dBm and peak PAE of 42.5%. The supply voltage of the PA was more than twice the breakdown voltage of corresponding CMOS on the same semiconductor process. The measured PA results were used to validate the model across different bias and input power level conditions.

Original languageEnglish (US)
Title of host publicationDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Pages413-416
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Montreal, QC, Canada
Duration: Jun 17 2012Jun 19 2012

Other

Other2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012
CountryCanada
CityMontreal, QC
Period6/17/126/19/12

Fingerprint

MESFET devices
Electric breakdown
Electric potential
Power amplifiers
Semiconductor materials
Silicon
Industry

Keywords

  • MESFETs
  • power amplifiers
  • semiconductor device modeling
  • silicon-on-insulator technology

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wilk, S. J., Ghajar, M. R., Lepkowski, W., Bakkaloglu, B., & Thornton, T. (2012). Characterization and modeling of enhanced voltage RF MESFETs on 45nm CMOS for RF applications. In Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium (pp. 413-416). [6242311] https://doi.org/10.1109/RFIC.2012.6242311

Characterization and modeling of enhanced voltage RF MESFETs on 45nm CMOS for RF applications. / Wilk, Seth J.; Ghajar, M. Reza; Lepkowski, William; Bakkaloglu, Bertan; Thornton, Trevor.

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. 2012. p. 413-416 6242311.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wilk, SJ, Ghajar, MR, Lepkowski, W, Bakkaloglu, B & Thornton, T 2012, Characterization and modeling of enhanced voltage RF MESFETs on 45nm CMOS for RF applications. in Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium., 6242311, pp. 413-416, 2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012, Montreal, QC, Canada, 6/17/12. https://doi.org/10.1109/RFIC.2012.6242311
Wilk SJ, Ghajar MR, Lepkowski W, Bakkaloglu B, Thornton T. Characterization and modeling of enhanced voltage RF MESFETs on 45nm CMOS for RF applications. In Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. 2012. p. 413-416. 6242311 https://doi.org/10.1109/RFIC.2012.6242311
Wilk, Seth J. ; Ghajar, M. Reza ; Lepkowski, William ; Bakkaloglu, Bertan ; Thornton, Trevor. / Characterization and modeling of enhanced voltage RF MESFETs on 45nm CMOS for RF applications. Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. 2012. pp. 413-416
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