Characterization and measurement of silicon solar cells with floating junction passivation

Christiana Honsberg, Keith R. McIntosh, Ganokwan Boonprakaikaew, Seyed Ghozati, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Theoretical and experimental demonstrations have shown that excellent rear surface passivation can be attained by using a floating junction. The extent to which the rear is passivated, however, can be difficult to ascertain, particularly when there exist parasitic shunts across the floating junction. This paper presents a new experimental technique suitable for bifacial floating junction solar cells, that determines two key parameters associated with the rear: the fraction of current transferred from the rear to the front, and the magnitude of the parasitic shunt resistance. In the latter case, either a local or a averaged value can be found. Measurements on floating junction buried contact solar cells show that the shunt resistance in buried contact solar cells can be over 1 MΩ.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages247-250
Number of pages4
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: Sep 29 1997Oct 3 1997

Other

OtherProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA
Period9/29/9710/3/97

Fingerprint

Silicon solar cells
Passivation
floating
passivity
Solar cells
shunts
solar cells
electric contacts
Demonstrations

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Honsberg, C., McIntosh, K. R., Boonprakaikaew, G., Ghozati, S., & Wenham, S. R. (1997). Characterization and measurement of silicon solar cells with floating junction passivation. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 247-250). IEEE.

Characterization and measurement of silicon solar cells with floating junction passivation. / Honsberg, Christiana; McIntosh, Keith R.; Boonprakaikaew, Ganokwan; Ghozati, Seyed; Wenham, Stuart R.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. IEEE, 1997. p. 247-250.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Honsberg, C, McIntosh, KR, Boonprakaikaew, G, Ghozati, S & Wenham, SR 1997, Characterization and measurement of silicon solar cells with floating junction passivation. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, pp. 247-250, Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Anaheim, CA, USA, 9/29/97.
Honsberg C, McIntosh KR, Boonprakaikaew G, Ghozati S, Wenham SR. Characterization and measurement of silicon solar cells with floating junction passivation. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE. 1997. p. 247-250
Honsberg, Christiana ; McIntosh, Keith R. ; Boonprakaikaew, Ganokwan ; Ghozati, Seyed ; Wenham, Stuart R. / Characterization and measurement of silicon solar cells with floating junction passivation. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. IEEE, 1997. pp. 247-250
@inproceedings{ff07483cf63b4615a3bbd77ee878e809,
title = "Characterization and measurement of silicon solar cells with floating junction passivation",
abstract = "Theoretical and experimental demonstrations have shown that excellent rear surface passivation can be attained by using a floating junction. The extent to which the rear is passivated, however, can be difficult to ascertain, particularly when there exist parasitic shunts across the floating junction. This paper presents a new experimental technique suitable for bifacial floating junction solar cells, that determines two key parameters associated with the rear: the fraction of current transferred from the rear to the front, and the magnitude of the parasitic shunt resistance. In the latter case, either a local or a averaged value can be found. Measurements on floating junction buried contact solar cells show that the shunt resistance in buried contact solar cells can be over 1 MΩ.",
author = "Christiana Honsberg and McIntosh, {Keith R.} and Ganokwan Boonprakaikaew and Seyed Ghozati and Wenham, {Stuart R.}",
year = "1997",
language = "English (US)",
pages = "247--250",
editor = "Anon",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "IEEE",

}

TY - GEN

T1 - Characterization and measurement of silicon solar cells with floating junction passivation

AU - Honsberg, Christiana

AU - McIntosh, Keith R.

AU - Boonprakaikaew, Ganokwan

AU - Ghozati, Seyed

AU - Wenham, Stuart R.

PY - 1997

Y1 - 1997

N2 - Theoretical and experimental demonstrations have shown that excellent rear surface passivation can be attained by using a floating junction. The extent to which the rear is passivated, however, can be difficult to ascertain, particularly when there exist parasitic shunts across the floating junction. This paper presents a new experimental technique suitable for bifacial floating junction solar cells, that determines two key parameters associated with the rear: the fraction of current transferred from the rear to the front, and the magnitude of the parasitic shunt resistance. In the latter case, either a local or a averaged value can be found. Measurements on floating junction buried contact solar cells show that the shunt resistance in buried contact solar cells can be over 1 MΩ.

AB - Theoretical and experimental demonstrations have shown that excellent rear surface passivation can be attained by using a floating junction. The extent to which the rear is passivated, however, can be difficult to ascertain, particularly when there exist parasitic shunts across the floating junction. This paper presents a new experimental technique suitable for bifacial floating junction solar cells, that determines two key parameters associated with the rear: the fraction of current transferred from the rear to the front, and the magnitude of the parasitic shunt resistance. In the latter case, either a local or a averaged value can be found. Measurements on floating junction buried contact solar cells show that the shunt resistance in buried contact solar cells can be over 1 MΩ.

UR - http://www.scopus.com/inward/record.url?scp=0031370372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031370372&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031370372

SP - 247

EP - 250

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

A2 - Anon, null

PB - IEEE

ER -