Characterization and measurement of silicon solar cells with floating junction passivation

Christiana Honsberg, Keith R. McIntosh, Ganokwan Boonprakaikaew, Seyed Ghozati, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Theoretical and experimental demonstrations have shown that excellent rear surface passivation can be attained by using a floating junction. The extent to which the rear is passivated, however, can be difficult to ascertain, particularly when there exist parasitic shunts across the floating junction. This paper presents a new experimental technique suitable for bifacial floating junction solar cells, that determines two key parameters associated with the rear: the fraction of current transferred from the rear to the front, and the magnitude of the parasitic shunt resistance. In the latter case, either a local or a averaged value can be found. Measurements on floating junction buried contact solar cells show that the shunt resistance in buried contact solar cells can be over 1 MΩ.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages247-250
Number of pages4
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: Sep 29 1997Oct 3 1997

Other

OtherProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA
Period9/29/9710/3/97

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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