Characterization and comparison of silicon nitride films deposited using two novel processes

Vivek Sharma, Adam Bailey, Bill Dauksher, Clarence Tracy, Stuart Bowden, Barry O'Brien

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiN x:H novel deposition processes using two different PECVD tools-one nontraditional in process regime and the other nontraditional in type-to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using variable angle spectroscopic ellipsometry, reflectance, FTIR, RBS and elastic recoil detection. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.

Original languageEnglish (US)
Article number021201
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume30
Issue number2
DOIs
StatePublished - Mar 2012

Fingerprint

Silicon nitride
silicon nitrides
Plasma enhanced chemical vapor deposition
solar cells
Annealing
reflectance
Antireflection coatings
annealing
Spectroscopic ellipsometry
experiment design
antireflection coatings
Silicon solar cells
Design of experiments
ellipsometry
Solar cells
silicon nitride
methodology
Crystalline materials
Fabrication
fabrication

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Characterization and comparison of silicon nitride films deposited using two novel processes. / Sharma, Vivek; Bailey, Adam; Dauksher, Bill; Tracy, Clarence; Bowden, Stuart; O'Brien, Barry.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 30, No. 2, 021201, 03.2012.

Research output: Contribution to journalArticle

@article{7f6f1f81bdee448e8d4a6546e6233ce9,
title = "Characterization and comparison of silicon nitride films deposited using two novel processes",
abstract = "Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiN x:H novel deposition processes using two different PECVD tools-one nontraditional in process regime and the other nontraditional in type-to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using variable angle spectroscopic ellipsometry, reflectance, FTIR, RBS and elastic recoil detection. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.",
author = "Vivek Sharma and Adam Bailey and Bill Dauksher and Clarence Tracy and Stuart Bowden and Barry O'Brien",
year = "2012",
month = "3",
doi = "10.1116/1.3687423",
language = "English (US)",
volume = "30",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Characterization and comparison of silicon nitride films deposited using two novel processes

AU - Sharma, Vivek

AU - Bailey, Adam

AU - Dauksher, Bill

AU - Tracy, Clarence

AU - Bowden, Stuart

AU - O'Brien, Barry

PY - 2012/3

Y1 - 2012/3

N2 - Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiN x:H novel deposition processes using two different PECVD tools-one nontraditional in process regime and the other nontraditional in type-to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using variable angle spectroscopic ellipsometry, reflectance, FTIR, RBS and elastic recoil detection. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.

AB - Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiN x:H novel deposition processes using two different PECVD tools-one nontraditional in process regime and the other nontraditional in type-to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using variable angle spectroscopic ellipsometry, reflectance, FTIR, RBS and elastic recoil detection. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.

UR - http://www.scopus.com/inward/record.url?scp=84858066250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858066250&partnerID=8YFLogxK

U2 - 10.1116/1.3687423

DO - 10.1116/1.3687423

M3 - Article

VL - 30

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

M1 - 021201

ER -