Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient antireflection coating and passivating layer. In this paper, we compared two SiN x:H novel deposition processes using two different PECVD tools-one nontraditional in process regime and the other nontraditional in type-to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using variable angle spectroscopic ellipsometry, reflectance, FTIR, RBS and elastic recoil detection. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Mar 1 2012|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films