Characterization and comparison of silicon nitride films deposited using two novel processes

Vivek Sharma, Adam Bailey, Bill Dauksher, Clarence Tracy, Stuart Bowden, Barry O'Brien

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient anti-reflection coating and passivating layer. In this paper, we compared two novel SiN x:H deposition processes using two different PECVD tools - one non-traditional in process regime, and the other non-traditional in type, to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using VASE, reflectance, FTIR and RBS/ERD. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2206-2211
Number of pages6
DOIs
StatePublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period6/19/116/24/11

Fingerprint

Silicon nitride
Plasma enhanced chemical vapor deposition
Annealing
Antireflection coatings
Silicon solar cells
Design of experiments
Solar cells
Crystalline materials
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Sharma, V., Bailey, A., Dauksher, B., Tracy, C., Bowden, S., & O'Brien, B. (2011). Characterization and comparison of silicon nitride films deposited using two novel processes. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2206-2211). [6186395] https://doi.org/10.1109/PVSC.2011.6186395

Characterization and comparison of silicon nitride films deposited using two novel processes. / Sharma, Vivek; Bailey, Adam; Dauksher, Bill; Tracy, Clarence; Bowden, Stuart; O'Brien, Barry.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 2206-2211 6186395.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sharma, V, Bailey, A, Dauksher, B, Tracy, C, Bowden, S & O'Brien, B 2011, Characterization and comparison of silicon nitride films deposited using two novel processes. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6186395, pp. 2206-2211, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6186395
Sharma V, Bailey A, Dauksher B, Tracy C, Bowden S, O'Brien B. Characterization and comparison of silicon nitride films deposited using two novel processes. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 2206-2211. 6186395 https://doi.org/10.1109/PVSC.2011.6186395
Sharma, Vivek ; Bailey, Adam ; Dauksher, Bill ; Tracy, Clarence ; Bowden, Stuart ; O'Brien, Barry. / Characterization and comparison of silicon nitride films deposited using two novel processes. Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. pp. 2206-2211
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