Characterization and analysis of InGaN photovoltaic devices

Omkar Jani; Christiana Honsberg; Ali Asghar; David Nicol; Ian Ferguson; Alan Doolittle; Sarah Kurtz

Characterization and analysis of InGaN photovoltaic devices

Omkar Jani, Christiana Honsberg, Ali Asghar, David Nicol, Ian Ferguson, Alan Doolittle, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In _0.07Ga _0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	37-42
Number of pages	6
State	Published - 2005
Externally published	Yes
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005

Other

Other	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	1/3/05 → 1/7/05

ASJC Scopus subject areas

Condensed Matter Physics
Control and Systems Engineering

Cite this

@inproceedings{24638150b81149239f37889394d8bbbe,

title = "Characterization and analysis of InGaN photovoltaic devices",

abstract = "The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.",

author = "Omkar Jani and Christiana Honsberg and Ali Asghar and David Nicol and Ian Ferguson and Alan Doolittle and Sarah Kurtz",

year = "2005",

language = "English (US)",

pages = "37--42",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - GEN

T1 - Characterization and analysis of InGaN photovoltaic devices

AU - Jani, Omkar

AU - Honsberg, Christiana

AU - Asghar, Ali

AU - Nicol, David

AU - Ferguson, Ian

AU - Doolittle, Alan

AU - Kurtz, Sarah

PY - 2005

Y1 - 2005

N2 - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

AB - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

UR - http://www.scopus.com/inward/record.url?scp=27944476343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944476343&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:27944476343

SP - 37

EP - 42

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Characterization and analysis of InGaN photovoltaic devices

Abstract

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ASJC Scopus subject areas

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