Characterization and analysis of InGaN photovoltaic devices

Omkar Jani, Christiana Honsberg, Ali Asghar, David Nicol, Ian Ferguson, Alan Doolittle, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Citations (Scopus)

Abstract

The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages37-42
Number of pages6
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

Other

Other31st IEEE Photovoltaic Specialists Conference - 2005
CountryUnited States
CityLake Buena Vista, FL
Period1/3/051/7/05

Fingerprint

Solar cells
solar cells
Semiconductor quantum wells
quantum wells
Photoemission
Quantum efficiency
quantum efficiency
photoelectric emission
Metallorganic chemical vapor deposition
mesas
metalorganic chemical vapor deposition
Photoluminescence
Lighting
illumination
photoluminescence
X ray diffraction
configurations
Chemical analysis
diffraction
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

Jani, O., Honsberg, C., Asghar, A., Nicol, D., Ferguson, I., Doolittle, A., & Kurtz, S. (2005). Characterization and analysis of InGaN photovoltaic devices. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 37-42)

Characterization and analysis of InGaN photovoltaic devices. / Jani, Omkar; Honsberg, Christiana; Asghar, Ali; Nicol, David; Ferguson, Ian; Doolittle, Alan; Kurtz, Sarah.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2005. p. 37-42.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jani, O, Honsberg, C, Asghar, A, Nicol, D, Ferguson, I, Doolittle, A & Kurtz, S 2005, Characterization and analysis of InGaN photovoltaic devices. in Conference Record of the IEEE Photovoltaic Specialists Conference. pp. 37-42, 31st IEEE Photovoltaic Specialists Conference - 2005, Lake Buena Vista, FL, United States, 1/3/05.
Jani O, Honsberg C, Asghar A, Nicol D, Ferguson I, Doolittle A et al. Characterization and analysis of InGaN photovoltaic devices. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2005. p. 37-42
Jani, Omkar ; Honsberg, Christiana ; Asghar, Ali ; Nicol, David ; Ferguson, Ian ; Doolittle, Alan ; Kurtz, Sarah. / Characterization and analysis of InGaN photovoltaic devices. Conference Record of the IEEE Photovoltaic Specialists Conference. 2005. pp. 37-42
@inproceedings{24638150b81149239f37889394d8bbbe,
title = "Characterization and analysis of InGaN photovoltaic devices",
abstract = "The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8{\%} was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19{\%} as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.",
author = "Omkar Jani and Christiana Honsberg and Ali Asghar and David Nicol and Ian Ferguson and Alan Doolittle and Sarah Kurtz",
year = "2005",
language = "English (US)",
pages = "37--42",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

}

TY - GEN

T1 - Characterization and analysis of InGaN photovoltaic devices

AU - Jani, Omkar

AU - Honsberg, Christiana

AU - Asghar, Ali

AU - Nicol, David

AU - Ferguson, Ian

AU - Doolittle, Alan

AU - Kurtz, Sarah

PY - 2005

Y1 - 2005

N2 - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

AB - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

UR - http://www.scopus.com/inward/record.url?scp=27944476343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944476343&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:27944476343

SP - 37

EP - 42

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -