Abstract
The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Pages | 37-42 |
| Number of pages | 6 |
| State | Published - 2005 |
| Externally published | Yes |
| Event | 31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005 |
Other
| Other | 31st IEEE Photovoltaic Specialists Conference - 2005 |
|---|---|
| Country | United States |
| City | Lake Buena Vista, FL |
| Period | 1/3/05 → 1/7/05 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Control and Systems Engineering
Cite this
Characterization and analysis of InGaN photovoltaic devices. / Jani, Omkar; Honsberg, Christiana; Asghar, Ali; Nicol, David; Ferguson, Ian; Doolittle, Alan; Kurtz, Sarah.
Conference Record of the IEEE Photovoltaic Specialists Conference. 2005. p. 37-42.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization and analysis of InGaN photovoltaic devices
AU - Jani, Omkar
AU - Honsberg, Christiana
AU - Asghar, Ali
AU - Nicol, David
AU - Ferguson, Ian
AU - Doolittle, Alan
AU - Kurtz, Sarah
PY - 2005
Y1 - 2005
N2 - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.
AB - The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.
UR - http://www.scopus.com/inward/record.url?scp=27944476343&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27944476343&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:27944476343
SP - 37
EP - 42
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
ER -