Abstract
The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.
Original language | English (US) |
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Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
Pages | 37-42 |
Number of pages | 6 |
State | Published - 2005 |
Externally published | Yes |
Event | 31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005 |
Other
Other | 31st IEEE Photovoltaic Specialists Conference - 2005 |
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Country/Territory | United States |
City | Lake Buena Vista, FL |
Period | 1/3/05 → 1/7/05 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Control and Systems Engineering