Characterization and analysis of InGaN photovoltaic devices

Omkar Jani, Christiana Honsberg, Ali Asghar, David Nicol, Ian Ferguson, Alan Doolittle, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Scopus citations

Abstract

The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by X-ray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the well-region of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07Ga 0.93N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages37-42
Number of pages6
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

Other

Other31st IEEE Photovoltaic Specialists Conference - 2005
CountryUnited States
CityLake Buena Vista, FL
Period1/3/051/7/05

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering

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  • Cite this

    Jani, O., Honsberg, C., Asghar, A., Nicol, D., Ferguson, I., Doolittle, A., & Kurtz, S. (2005). Characterization and analysis of InGaN photovoltaic devices. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 37-42)