Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors

Engineering & Materials Science

• Phosphorus 100%
• Characterization (materials science) 72%
• Transistors 70%
• Silicon 65%
• Tensile strain 50%
• Doping (additives) 46%
• Rutherford backscattering spectroscopy 38%
• MOSFET devices 24%
• Molecular dynamics 23%
• Spectroscopy 23%
• Ions 19%
• X rays 18%
• Carbon 15%

Physics & Astronomy

• phosphorus 80%
• transistors 65%
• characterization 45%
• silicon 44%
• metal oxide semiconductors 21%
• mass spectroscopy 20%
• backscattering 18%
• field effect transistors 16%
• molecular dynamics 14%
• carbon 13%
• high resolution 12%
• curves 11%
• spectroscopy 10%
• ions 9%
• x rays 9%

Chemical Compounds

• Phosphorus(.) 68%
• Alloy 57%
• Strain 28%
• Rutherford Backscattering Spectroscopy 26%
• Secondary Ion Mass Spectroscopy 22%
• Field Effect 20%
• Metal Oxide 17%
• Semiconductor 15%
• Molecular Dynamics 15%
• X-Ray 12%
• Carbon Atom 9%
• Application 6%