TY - GEN
T1 - Characteristics sensitivity of FinFET to fin vertical nonuniformity
AU - Xu, Jiaojiao
AU - Ma, Chenyue
AU - Zhang, Chenfei
AU - Zhang, Xiufang
AU - Wu, Wen
AU - Cao, Yu
AU - Wang, Wenping
AU - Ye, Yun
AU - Yang, Shengqi
AU - Lin, Xinnan
AU - He, Jin
PY - 2011/11/23
Y1 - 2011/11/23
N2 - Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.
AB - Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.
KW - FinFET device
KW - Performance variation
KW - Process fluctuation
KW - Vertical nonuniformity
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M3 - Conference contribution
AN - SCOPUS:81455133455
SN - 9781439871393
T3 - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
SP - 176
EP - 179
BT - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
T2 - Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Y2 - 13 June 2011 through 16 June 2011
ER -