Characteristics sensitivity of FinFET to fin vertical nonuniformity

Jiaojiao Xu, Chenyue Ma, Chenfei Zhang, Xiufang Zhang, Wen Wu, Yu Cao, Wenping Wang, Yun Ye, Shengqi Yang, Xinnan Lin, Jin He

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages176-179
Number of pages4
StatePublished - Nov 23 2011
Externally publishedYes
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: Jun 13 2011Jun 16 2011

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Country/TerritoryUnited States
CityBoston, MA
Period6/13/116/16/11

Keywords

  • FinFET device
  • Performance variation
  • Process fluctuation
  • Vertical nonuniformity

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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