Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures

J. Reed, Meng Tao, D. G. Park, A. Botchkarev, Z. Fan, S. K. Suzue, D. Li, G. B. Gao, S. N. Mohammad, S. J. Chey, J. E. van Nostrand, D. G. Cahill, H. Morkoç

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

GaAs based metal-insulator-semiconductor structures utilizing a pseudomorphic Si interface layer were investigated. Deposition involved molecular beam epitaxy for GaAs and remote plasma enhanced chemical vapor epitaxy for Si and insulator (Si3N4) layers, all without exposure to air. As determined by the conductance method, interface trap densities in the upper 1010 eV-1 cm-2 were obtained, with samples withstanding high temperature rapid thermal annealing. Frequency dispersion and hysteresis of under 100 mV indicate the quality of the interface and bulk layers. Bulk trap density in the insulator appears to be below 1012 cm-2. Metal-insulator-semiconductor field-effect-transistors were fabricated and investigated. With GaAs channels, excess channel conduction which vanished at low temperatures was observed. Addition of as low as 5% InAs in the channel eliminated this excess channel current. A similar observation was made when a Ge interface layer was grown on GaAs prior to the Si layer. The excess current is attributed to interfacial traps below the midgap. Transconductances as high as 160 and 170 mS/mm have been obtained with about 2.5 μm gate length in GaAs and InGaAs channels, respectively.

Original languageEnglish (US)
Pages (from-to)1351-1357
Number of pages7
JournalSolid State Electronics
Volume38
Issue number7
DOIs
StatePublished - 1995
Externally publishedYes

Fingerprint

MIS (semiconductors)
MISFET devices
Metals
Semiconductor materials
Rapid thermal annealing
Transconductance
Epitaxial growth
Molecular beam epitaxy
Hysteresis
traps
Vapors
Plasmas
Temperature
insulators
Air
transconductance
epitaxy
molecular beam epitaxy
field effect transistors
hysteresis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Reed, J., Tao, M., Park, D. G., Botchkarev, A., Fan, Z., Suzue, S. K., ... Morkoç, H. (1995). Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures. Solid State Electronics, 38(7), 1351-1357. https://doi.org/10.1016/0038-1101(94)00267-J

Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures. / Reed, J.; Tao, Meng; Park, D. G.; Botchkarev, A.; Fan, Z.; Suzue, S. K.; Li, D.; Gao, G. B.; Mohammad, S. N.; Chey, S. J.; van Nostrand, J. E.; Cahill, D. G.; Morkoç, H.

In: Solid State Electronics, Vol. 38, No. 7, 1995, p. 1351-1357.

Research output: Contribution to journalArticle

Reed, J, Tao, M, Park, DG, Botchkarev, A, Fan, Z, Suzue, SK, Li, D, Gao, GB, Mohammad, SN, Chey, SJ, van Nostrand, JE, Cahill, DG & Morkoç, H 1995, 'Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures', Solid State Electronics, vol. 38, no. 7, pp. 1351-1357. https://doi.org/10.1016/0038-1101(94)00267-J
Reed, J. ; Tao, Meng ; Park, D. G. ; Botchkarev, A. ; Fan, Z. ; Suzue, S. K. ; Li, D. ; Gao, G. B. ; Mohammad, S. N. ; Chey, S. J. ; van Nostrand, J. E. ; Cahill, D. G. ; Morkoç, H. / Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures. In: Solid State Electronics. 1995 ; Vol. 38, No. 7. pp. 1351-1357.
@article{8e7d5045a68c4296816bbb12fc0d930c,
title = "Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures",
abstract = "GaAs based metal-insulator-semiconductor structures utilizing a pseudomorphic Si interface layer were investigated. Deposition involved molecular beam epitaxy for GaAs and remote plasma enhanced chemical vapor epitaxy for Si and insulator (Si3N4) layers, all without exposure to air. As determined by the conductance method, interface trap densities in the upper 1010 eV-1 cm-2 were obtained, with samples withstanding high temperature rapid thermal annealing. Frequency dispersion and hysteresis of under 100 mV indicate the quality of the interface and bulk layers. Bulk trap density in the insulator appears to be below 1012 cm-2. Metal-insulator-semiconductor field-effect-transistors were fabricated and investigated. With GaAs channels, excess channel conduction which vanished at low temperatures was observed. Addition of as low as 5{\%} InAs in the channel eliminated this excess channel current. A similar observation was made when a Ge interface layer was grown on GaAs prior to the Si layer. The excess current is attributed to interfacial traps below the midgap. Transconductances as high as 160 and 170 mS/mm have been obtained with about 2.5 μm gate length in GaAs and InGaAs channels, respectively.",
author = "J. Reed and Meng Tao and Park, {D. G.} and A. Botchkarev and Z. Fan and Suzue, {S. K.} and D. Li and Gao, {G. B.} and Mohammad, {S. N.} and Chey, {S. J.} and {van Nostrand}, {J. E.} and Cahill, {D. G.} and H. Morko{\cc}",
year = "1995",
doi = "10.1016/0038-1101(94)00267-J",
language = "English (US)",
volume = "38",
pages = "1351--1357",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7",

}

TY - JOUR

T1 - Characteristics of in situ deposited GaAs metal-insulator-semiconductor structures

AU - Reed, J.

AU - Tao, Meng

AU - Park, D. G.

AU - Botchkarev, A.

AU - Fan, Z.

AU - Suzue, S. K.

AU - Li, D.

AU - Gao, G. B.

AU - Mohammad, S. N.

AU - Chey, S. J.

AU - van Nostrand, J. E.

AU - Cahill, D. G.

AU - Morkoç, H.

PY - 1995

Y1 - 1995

N2 - GaAs based metal-insulator-semiconductor structures utilizing a pseudomorphic Si interface layer were investigated. Deposition involved molecular beam epitaxy for GaAs and remote plasma enhanced chemical vapor epitaxy for Si and insulator (Si3N4) layers, all without exposure to air. As determined by the conductance method, interface trap densities in the upper 1010 eV-1 cm-2 were obtained, with samples withstanding high temperature rapid thermal annealing. Frequency dispersion and hysteresis of under 100 mV indicate the quality of the interface and bulk layers. Bulk trap density in the insulator appears to be below 1012 cm-2. Metal-insulator-semiconductor field-effect-transistors were fabricated and investigated. With GaAs channels, excess channel conduction which vanished at low temperatures was observed. Addition of as low as 5% InAs in the channel eliminated this excess channel current. A similar observation was made when a Ge interface layer was grown on GaAs prior to the Si layer. The excess current is attributed to interfacial traps below the midgap. Transconductances as high as 160 and 170 mS/mm have been obtained with about 2.5 μm gate length in GaAs and InGaAs channels, respectively.

AB - GaAs based metal-insulator-semiconductor structures utilizing a pseudomorphic Si interface layer were investigated. Deposition involved molecular beam epitaxy for GaAs and remote plasma enhanced chemical vapor epitaxy for Si and insulator (Si3N4) layers, all without exposure to air. As determined by the conductance method, interface trap densities in the upper 1010 eV-1 cm-2 were obtained, with samples withstanding high temperature rapid thermal annealing. Frequency dispersion and hysteresis of under 100 mV indicate the quality of the interface and bulk layers. Bulk trap density in the insulator appears to be below 1012 cm-2. Metal-insulator-semiconductor field-effect-transistors were fabricated and investigated. With GaAs channels, excess channel conduction which vanished at low temperatures was observed. Addition of as low as 5% InAs in the channel eliminated this excess channel current. A similar observation was made when a Ge interface layer was grown on GaAs prior to the Si layer. The excess current is attributed to interfacial traps below the midgap. Transconductances as high as 160 and 170 mS/mm have been obtained with about 2.5 μm gate length in GaAs and InGaAs channels, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0029343138&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029343138&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(94)00267-J

DO - 10.1016/0038-1101(94)00267-J

M3 - Article

VL - 38

SP - 1351

EP - 1357

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -