Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

Engineering & Materials Science

• Burgers vector 100%
• Sapphire 75%
• Electron diffraction 75%
• Transmission electron microscopy 58%
• Screw dislocations 46%
• Dislocations (crystals) 45%
• Metallorganic chemical vapor deposition 44%
• Electron microscopy 36%
• Substrates 20%
• Defects 19%

Chemical Compounds

• Convergent Beam Electron Diffraction 94%
• Screw Dislocation 45%
• Domain Boundary 42%
• Transmission Electron Microscopy 37%
• Liquid Film 27%
• Chemical Vapour Deposition 25%
• Electron Microscopy 24%
• Displacement 23%
• Hexagonal Space Group 22%

Physics & Astronomy

• inversions 46%
• transmission electron microscopy 37%
• electron diffraction 32%
• sapphire 32%
• characterization 31%
• screw dislocations 21%
• atomic structure 19%
• metalorganic chemical vapor deposition 17%
• hollow 17%
• electron microscopy 16%
• tubes 13%
• defects 10%