Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

D. Cherns, W. T. Young, Fernando Ponce

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Transmission electron microscopy is used to analyse a range of defects observed in hexagonal GaN films grown on sapphire and GaN substrates by metalorganic chemical vapour deposition. Large angle convergent beam electron diffraction is used to analyse the Burgers vectors of dislocations and to show that hollow tubes, or nanopipes, are associated with screw dislocations having Burgers vectors ± c. Weak-beam electron microscopy shows that dislocations are dissociated into partials in the (0001) basal plane, but that threading segments are generally undissociated. The presence of high densities of inversion domains in GaN/sapphire films is confirmed using convergent beam electron diffraction and the atomic structure of the {1010} inversion domain boundary is determined by an analysis of displacement fringes seen in inclined domains.

Original languageEnglish (US)
Pages (from-to)76-81
Number of pages6
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
StatePublished - Dec 18 1997
Externally publishedYes

Fingerprint

Burgers vector
Aluminum Oxide
Sapphire
Electron diffraction
inversions
Transmission electron microscopy
Screw dislocations
transmission electron microscopy
Metallorganic chemical vapor deposition
sapphire
electron diffraction
Dislocations (crystals)
Electron microscopy
screw dislocations
atomic structure
Defects
metalorganic chemical vapor deposition
hollow
electron microscopy
Substrates

Keywords

  • Dislocations
  • GaN
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy. / Cherns, D.; Young, W. T.; Ponce, Fernando.

In: Materials Science and Engineering B, Vol. 50, No. 1-3, 18.12.1997, p. 76-81.

Research output: Contribution to journalArticle

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