Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

D. Cherns, W. T. Young, F. A. Ponce

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

Transmission electron microscopy is used to analyse a range of defects observed in hexagonal GaN films grown on sapphire and GaN substrates by metalorganic chemical vapour deposition. Large angle convergent beam electron diffraction is used to analyse the Burgers vectors of dislocations and to show that hollow tubes, or nanopipes, are associated with screw dislocations having Burgers vectors ± c. Weak-beam electron microscopy shows that dislocations are dissociated into partials in the (0001) basal plane, but that threading segments are generally undissociated. The presence of high densities of inversion domains in GaN/sapphire films is confirmed using convergent beam electron diffraction and the atomic structure of the {1010} inversion domain boundary is determined by an analysis of displacement fringes seen in inclined domains.

Original languageEnglish (US)
Pages (from-to)76-81
Number of pages6
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
DOIs
StatePublished - Dec 18 1997
Externally publishedYes

Keywords

  • Dislocations
  • GaN
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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