Characterisation of compound semiconductors by high resolution electron microscopy

David Smith, Ping Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Recent advantages in high-resolution electron microscopy have made it possible to extract atomic-level details about defects, interfaces and surfaces in compound semiconductors. The chemical composition of dislocation cores can be deduced by careful matching of experimental micrographs with image simulations, provided that the crystal polarity has first been independently determined. Interfacial quality in multilayer materials can be determined by imaging at optimal values of objective lens defocus and specimen thickness. The nature of surface reconstructions induced by cleaning under ultrahigh vacuum conditions can be established with assistance from image simulations and prior knowledge of the crystal polarity. High-resolution studies of compound semiconductors in our laboratory and elsewhere are reviewed.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Place of PublicationBristol, United Kingdom
PublisherPubl by Inst of Physics Publ Ltd
Pages1-10
Number of pages10
Edition117
ISBN (Print)0854984062
StatePublished - 1991
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: Mar 25 1991Mar 28 1991

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period3/25/913/28/91

Fingerprint

High resolution electron microscopy
electron microscopy
polarity
Semiconductor materials
Crystals
Surface reconstruction
high resolution
Ultrahigh vacuum
Dislocations (crystals)
cleaning
ultrahigh vacuum
crystals
Cleaning
Lenses
Multilayers
chemical composition
simulation
lenses
Imaging techniques
Defects

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Smith, D., & Lu, P. (1991). Characterisation of compound semiconductors by high resolution electron microscopy. In Institute of Physics Conference Series (117 ed., pp. 1-10). Bristol, United Kingdom: Publ by Inst of Physics Publ Ltd.

Characterisation of compound semiconductors by high resolution electron microscopy. / Smith, David; Lu, Ping.

Institute of Physics Conference Series. 117. ed. Bristol, United Kingdom : Publ by Inst of Physics Publ Ltd, 1991. p. 1-10.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Smith, D & Lu, P 1991, Characterisation of compound semiconductors by high resolution electron microscopy. in Institute of Physics Conference Series. 117 edn, Publ by Inst of Physics Publ Ltd, Bristol, United Kingdom, pp. 1-10, Proceedings of the Conference on Microscopy of Semiconducting Materials 1991, Oxford, Engl, 3/25/91.
Smith D, Lu P. Characterisation of compound semiconductors by high resolution electron microscopy. In Institute of Physics Conference Series. 117 ed. Bristol, United Kingdom: Publ by Inst of Physics Publ Ltd. 1991. p. 1-10
Smith, David ; Lu, Ping. / Characterisation of compound semiconductors by high resolution electron microscopy. Institute of Physics Conference Series. 117. ed. Bristol, United Kingdom : Publ by Inst of Physics Publ Ltd, 1991. pp. 1-10
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