Characterisation of compound semiconductors by high resolution electron microscopy

David Smith, Ping Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Recent advantages in high-resolution electron microscopy have made it possible to extract atomic-level details about defects, interfaces and surfaces in compound semiconductors. The chemical composition of dislocation cores can be deduced by careful matching of experimental micrographs with image simulations, provided that the crystal polarity has first been independently determined. Interfacial quality in multilayer materials can be determined by imaging at optimal values of objective lens defocus and specimen thickness. The nature of surface reconstructions induced by cleaning under ultrahigh vacuum conditions can be established with assistance from image simulations and prior knowledge of the crystal polarity. High-resolution studies of compound semiconductors in our laboratory and elsewhere are reviewed.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages1-10
Number of pages10
Edition117
ISBN (Print)0854984062
StatePublished - Dec 1 1991
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: Mar 25 1991Mar 28 1991

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period3/25/913/28/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Smith, D., & Lu, P. (1991). Characterisation of compound semiconductors by high resolution electron microscopy. In Institute of Physics Conference Series (117 ed., pp. 1-10). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.