Characterisation of compound semiconductors by high resolution electron microscopy

David Smith, Ping Lu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Scopus citations

    Abstract

    Recent advantages in high-resolution electron microscopy have made it possible to extract atomic-level details about defects, interfaces and surfaces in compound semiconductors. The chemical composition of dislocation cores can be deduced by careful matching of experimental micrographs with image simulations, provided that the crystal polarity has first been independently determined. Interfacial quality in multilayer materials can be determined by imaging at optimal values of objective lens defocus and specimen thickness. The nature of surface reconstructions induced by cleaning under ultrahigh vacuum conditions can be established with assistance from image simulations and prior knowledge of the crystal polarity. High-resolution studies of compound semiconductors in our laboratory and elsewhere are reviewed.

    Original languageEnglish (US)
    Title of host publicationInstitute of Physics Conference Series
    PublisherPubl by Inst of Physics Publ Ltd
    Pages1-10
    Number of pages10
    Edition117
    ISBN (Print)0854984062
    StatePublished - Dec 1 1991
    EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
    Duration: Mar 25 1991Mar 28 1991

    Publication series

    NameInstitute of Physics Conference Series
    Number117
    ISSN (Print)0373-0751

    Other

    OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
    CityOxford, Engl
    Period3/25/913/28/91

    ASJC Scopus subject areas

    • General Physics and Astronomy

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