TY - GEN
T1 - Characterisation of compound semiconductors by high resolution electron microscopy
AU - Smith, David
AU - Lu, Ping
PY - 1991/12/1
Y1 - 1991/12/1
N2 - Recent advantages in high-resolution electron microscopy have made it possible to extract atomic-level details about defects, interfaces and surfaces in compound semiconductors. The chemical composition of dislocation cores can be deduced by careful matching of experimental micrographs with image simulations, provided that the crystal polarity has first been independently determined. Interfacial quality in multilayer materials can be determined by imaging at optimal values of objective lens defocus and specimen thickness. The nature of surface reconstructions induced by cleaning under ultrahigh vacuum conditions can be established with assistance from image simulations and prior knowledge of the crystal polarity. High-resolution studies of compound semiconductors in our laboratory and elsewhere are reviewed.
AB - Recent advantages in high-resolution electron microscopy have made it possible to extract atomic-level details about defects, interfaces and surfaces in compound semiconductors. The chemical composition of dislocation cores can be deduced by careful matching of experimental micrographs with image simulations, provided that the crystal polarity has first been independently determined. Interfacial quality in multilayer materials can be determined by imaging at optimal values of objective lens defocus and specimen thickness. The nature of surface reconstructions induced by cleaning under ultrahigh vacuum conditions can be established with assistance from image simulations and prior knowledge of the crystal polarity. High-resolution studies of compound semiconductors in our laboratory and elsewhere are reviewed.
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M3 - Conference contribution
AN - SCOPUS:0026365480
SN - 0854984062
T3 - Institute of Physics Conference Series
SP - 1
EP - 10
BT - Institute of Physics Conference Series
PB - Publ by Inst of Physics Publ Ltd
T2 - Proceedings of the Conference on Microscopy of Semiconducting Materials 1991
Y2 - 25 March 1991 through 28 March 1991
ER -