Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

R. Leon, G. M. Swift, B. Magness, W. A. Taylor, Y. S. Tang, K. L. Wang, P. Dowd, Yong-Hang Zhang

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Abstract

The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

Original languageEnglish (US)
Pages (from-to)2074-2076
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number15
DOIs
StatePublished - Apr 10 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Leon, R., Swift, G. M., Magness, B., Taylor, W. A., Tang, Y. S., Wang, K. L., Dowd, P., & Zhang, Y-H. (2000). Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots. Applied Physics Letters, 76(15), 2074-2076. https://doi.org/10.1063/1.126259