Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

R. Leon, G. M. Swift, B. Magness, W. A. Taylor, Y. S. Tang, K. L. Wang, P. Dowd, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

105 Scopus citations

Abstract

The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.

Original languageEnglish (US)
Pages (from-to)2074-2076
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number15
DOIs
StatePublished - Apr 10 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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