@article{9d2b0e3b3c284eb2b134832c1927c74b,
title = "Changes in band alignment during annealing at 600 °c of ALD Al2O3 on (InxGa1 - X)2O3 for x = 0.25-0.74",
abstract = "Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 - x)2O3 (where x = 0.25-0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from -0.38 eV for (In0.25Ga0.75)2O3 to -1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample.",
author = "Chaker Fares and Minghan Xian and Smith, {David J.} and McCartney, {Martha R.} and Max Knei{\ss} and {Von Wenckstern}, Holger and Marius Grundmann and Marko Tadjer and Fan Ren and Pearton, {S. J.}",
note = "Funding Information: This work was supported by the Department of the Defense, Defense Threat Reduction Agency, under No. HDTRA1-17-1-011, monitored by Jacob Calkins and also by the National Science Foundation (No. DMR 1856662; Tania Paskova). Research at Naval Research Laboratory was supported by the Office of Naval Research (ONR), partially under Award No. N00014-15-1-2392. The authors at Leipzig thank J{\"o}rg Lenzner for EDX measurements and Monika Hahn for PLD target preparation. D.J.S. and M.R.M. acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. M.K. acknowledges support by the European Social Fund within the Young Investigator Group “Oxide Heterostructures” (No. SAB 100310460) and the Leipzig School for Natural Sciences BuildMoNa. Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = mar,
day = "14",
doi = "10.1063/5.0002875",
language = "English (US)",
volume = "127",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",
}