TY - GEN
T1 - Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs
AU - Guerra, Diego
AU - Akis, Richard
AU - Ferry, David K.
AU - Goodnick, Stephen
AU - Saraniti, Marco
AU - Marino, Fabio A.
PY - 2010
Y1 - 2010
N2 - An investigation of RF short-channel effects in state-of-the-art GaN and InGaAs HEMTs, in relation to effective gate length and aspect ratio, is performed through our full band Cellular Monte Carlo simulator. In particular, the short-circuit current gain cut-off frequency, fT, is extracted using two different methods for several gate lengths. The first method relates fT to the electron transit time in the gate region, and from the electron velocity profile allows a direct estimation of fT, the effective gate length Leff, and the investigation of the nananoscale carrier dynamics in the channel. The second extraction methods derives f T through small-signal analysis. Our results indicates that the increasing difference between effective gate length and metallurgical gate length, as the device is scaled, plays a major role in limiting the RF performance. Moreover, maintaining a minimum aspect ratio of 5 for InGaAs HEMTs, and 10 for GsN devices, helps mitigating the short-channel effects.
AB - An investigation of RF short-channel effects in state-of-the-art GaN and InGaAs HEMTs, in relation to effective gate length and aspect ratio, is performed through our full band Cellular Monte Carlo simulator. In particular, the short-circuit current gain cut-off frequency, fT, is extracted using two different methods for several gate lengths. The first method relates fT to the electron transit time in the gate region, and from the electron velocity profile allows a direct estimation of fT, the effective gate length Leff, and the investigation of the nananoscale carrier dynamics in the channel. The second extraction methods derives f T through small-signal analysis. Our results indicates that the increasing difference between effective gate length and metallurgical gate length, as the device is scaled, plays a major role in limiting the RF performance. Moreover, maintaining a minimum aspect ratio of 5 for InGaAs HEMTs, and 10 for GsN devices, helps mitigating the short-channel effects.
UR - http://www.scopus.com/inward/record.url?scp=78751681708&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751681708&partnerID=8YFLogxK
U2 - 10.1109/IWCE.2010.5678006
DO - 10.1109/IWCE.2010.5678006
M3 - Conference contribution
AN - SCOPUS:78751681708
SN - 9781424493845
T3 - 2010 14th International Workshop on Computational Electronics, IWCE 2010
SP - 105
EP - 108
BT - 2010 14th International Workshop on Computational Electronics, IWCE 2010
T2 - 2010 14th International Workshop on Computational Electronics, IWCE 2010
Y2 - 26 October 2010 through 29 October 2010
ER -