Abstract

Here we discuss the use of the Cellular Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling. The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods. As a particular example, this method is applied to study high field transport in GaN and GaN/AlGaN heterostructures, where good agreement is obtained between the simulated results, and experimental pulse I-V measurements of transport. For device simulation, the CMC algorithm is coupled to an efficient 2D/3D multi-grid Poisson solver. We discuss the application of this algorithm to several technological problems of interest, including ultra-short channel Si/Ge MOSFETs, III-V compound HEMTs, and AlGaN/GaN HEMTs.

Original languageEnglish (US)
Pages (from-to)465-473
Number of pages9
JournalInternational Journal of High Speed Electronics and Systems
Volume17
Issue number3
DOIs
StatePublished - Sep 2007

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High electron mobility transistors
Semiconductor devices
Band structure
Heterojunctions
Monte Carlo methods
Crystal structure
Semiconductor materials
aluminum gallium nitride
Monte Carlo simulation

Keywords

  • Monte Carlo
  • Semiconductors
  • Transport

ASJC Scopus subject areas

  • Media Technology
  • Electrical and Electronic Engineering

Cite this

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abstract = "Here we discuss the use of the Cellular Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling. The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods. As a particular example, this method is applied to study high field transport in GaN and GaN/AlGaN heterostructures, where good agreement is obtained between the simulated results, and experimental pulse I-V measurements of transport. For device simulation, the CMC algorithm is coupled to an efficient 2D/3D multi-grid Poisson solver. We discuss the application of this algorithm to several technological problems of interest, including ultra-short channel Si/Ge MOSFETs, III-V compound HEMTs, and AlGaN/GaN HEMTs.",
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AB - Here we discuss the use of the Cellular Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling. The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods. As a particular example, this method is applied to study high field transport in GaN and GaN/AlGaN heterostructures, where good agreement is obtained between the simulated results, and experimental pulse I-V measurements of transport. For device simulation, the CMC algorithm is coupled to an efficient 2D/3D multi-grid Poisson solver. We discuss the application of this algorithm to several technological problems of interest, including ultra-short channel Si/Ge MOSFETs, III-V compound HEMTs, and AlGaN/GaN HEMTs.

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