Abstract

Quantum well field effect transistors have been proposed as promising device candidates for future high-speed and low-power logic applications due to their high electron mobility. This paper aims to study InAs and InGaAs state-of-the-art QWFETs, investigating both RF and DC performance through our full band Cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of these devices has been performed using experimental data to calibrate the simulation parameters.

Original languageEnglish (US)
Title of host publication2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages109-112
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy
Duration: Oct 26 2010Oct 29 2010

Publication series

Name2010 14th International Workshop on Computational Electronics, IWCE 2010

Other

Other2010 14th International Workshop on Computational Electronics, IWCE 2010
CountryItaly
CityPisa
Period10/26/1010/29/10

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ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Marino, F. A., Guerra, D., Ferry, D. K., Goodnick, S., & Saraniti, M. (2010). Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors. In 2010 14th International Workshop on Computational Electronics, IWCE 2010 (pp. 109-112). [5678003] (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5678003