TY - GEN
T1 - Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors
AU - Marino, Fabio Alessio
AU - Guerra, Diego
AU - Ferry, David K.
AU - Goodnick, Stephen
AU - Saraniti, Marco
PY - 2010
Y1 - 2010
N2 - Quantum well field effect transistors have been proposed as promising device candidates for future high-speed and low-power logic applications due to their high electron mobility. This paper aims to study InAs and InGaAs state-of-the-art QWFETs, investigating both RF and DC performance through our full band Cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of these devices has been performed using experimental data to calibrate the simulation parameters.
AB - Quantum well field effect transistors have been proposed as promising device candidates for future high-speed and low-power logic applications due to their high electron mobility. This paper aims to study InAs and InGaAs state-of-the-art QWFETs, investigating both RF and DC performance through our full band Cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of these devices has been performed using experimental data to calibrate the simulation parameters.
UR - http://www.scopus.com/inward/record.url?scp=78751682034&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751682034&partnerID=8YFLogxK
U2 - 10.1109/IWCE.2010.5678003
DO - 10.1109/IWCE.2010.5678003
M3 - Conference contribution
AN - SCOPUS:78751682034
SN - 9781424493845
T3 - 2010 14th International Workshop on Computational Electronics, IWCE 2010
SP - 109
EP - 112
BT - 2010 14th International Workshop on Computational Electronics, IWCE 2010
T2 - 2010 14th International Workshop on Computational Electronics, IWCE 2010
Y2 - 26 October 2010 through 29 October 2010
ER -