We present systematic theoretical cellular automata studies of vertically grown, nanometre-scale, MOSFETs. The predicted drain characteristics and output conductance are in excellent agreement with experimental data from fabricated devices. The inclusion of an inhomogeneous p-doping profiles along the channel is investigated, which is shown to improve current saturation and therefore allows the reduction of the device dimensions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry