Cellular automata simulation of nanometre-scale MOSFETs

Marco Saraniti; G. Zandler; G. Formicone; S. Wigger; Stephen Goodnick

doi:10.1088/0268-1242/13/8A/050

Cellular automata simulation of nanometre-scale MOSFETs

Marco Saraniti, G. Zandler, G. Formicone, S. Wigger, Stephen Goodnick

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We present systematic theoretical cellular automata studies of vertically grown, nanometre-scale, MOSFETs. The predicted drain characteristics and output conductance are in excellent agreement with experimental data from fabricated devices. The inclusion of an inhomogeneous p-doping profiles along the channel is investigated, which is shown to improve current saturation and therefore allows the reduction of the device dimensions.

Original language	English (US)
Pages (from-to)	A177-A179
Journal	Semiconductor Science and Technology
Volume	13
Issue number	8 SUPPL. A
DOIs	https://doi.org/10.1088/0268-1242/13/8A/050
State	Published - 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/13/8A/050

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title = "Cellular automata simulation of nanometre-scale MOSFETs",

abstract = "We present systematic theoretical cellular automata studies of vertically grown, nanometre-scale, MOSFETs. The predicted drain characteristics and output conductance are in excellent agreement with experimental data from fabricated devices. The inclusion of an inhomogeneous p-doping profiles along the channel is investigated, which is shown to improve current saturation and therefore allows the reduction of the device dimensions.",

author = "Marco Saraniti and G. Zandler and G. Formicone and S. Wigger and Stephen Goodnick",

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AU - Saraniti, Marco

AU - Zandler, G.

AU - Formicone, G.

AU - Wigger, S.

AU - Goodnick, Stephen

PY - 1998

Y1 - 1998

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AB - We present systematic theoretical cellular automata studies of vertically grown, nanometre-scale, MOSFETs. The predicted drain characteristics and output conductance are in excellent agreement with experimental data from fabricated devices. The inclusion of an inhomogeneous p-doping profiles along the channel is investigated, which is shown to improve current saturation and therefore allows the reduction of the device dimensions.

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JO - Semiconductor Science and Technology

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ER -

Cellular automata simulation of nanometre-scale MOSFETs

Abstract

ASJC Scopus subject areas

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