Abstract

We present systematic theoretical cellular automata studies of vertically grown, nanometre-scale, MOSFETs. The predicted drain characteristics and output conductance are in excellent agreement with experimental data from fabricated devices. The inclusion of an inhomogeneous p-doping profiles along the channel is investigated, which is shown to improve current saturation and therefore allows the reduction of the device dimensions.

Original languageEnglish (US)
Pages (from-to)A177-A179
JournalSemiconductor Science and Technology
Volume13
Issue number8 SUPPL. A
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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