Abstract

We present a discussion of various concepts of cellular automata for semiconductor transport in the context of device simulation. A newly developed transformation for the kinetic terms of the Boltzmann equation into deterministic transition rules are found to be superior to probabilistic rules, allowing a complete suppression of statistical errors without any loss in numerical performance. To take advantage of the high speed of the resulting Cellular Automaton, a fast and flexible multigrid-solver for the Poisson equation has been developed. This enables us to study also fluctuations of transport quantities, which determine the high frequency noise behavior of MOSFETs, within the Cellular Automata approach. The reliability of the new CA approach for nanostructured devices is demonstrated by a study of gate length influence onto the drain current characteristics of a novel vertically grown MOSFET.

Original languageEnglish (US)
Title of host publication1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-42
Number of pages4
ISBN (Electronic)0780327454
DOIs
StatePublished - Jan 1 1996
Event1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 - Tokyo, Japan
Duration: Sep 2 1996Sep 4 1996

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996
CountryJapan
CityTokyo
Period9/2/969/4/96

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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  • Cite this

    Zandler, G., Saraniti, M., Rein, A., & Vogl, P. (1996). Cellular automata for device simulation-concepts and applications. In 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 1996 (pp. 39-42). [865263] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.1996.865263