The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Apr 19 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)