CdTe(111)B grown on Si(111) by molecular beam epitaxy

S. Rujirawat, Y. Xin, N. D. Browning, S. Sivananthan, David Smith, S. C Y Tsen, Y. P. Chen, V. Nathan

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.

Original languageEnglish (US)
Pages (from-to)2346-2348
Number of pages3
JournalApplied Physics Letters
Issue number16
StatePublished - Apr 19 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'CdTe(111)B grown on Si(111) by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this