CdTe(111)B grown on Si(111) by molecular beam epitaxy

S. Rujirawat, Y. Xin, N. D. Browning, S. Sivananthan, David Smith, S. C Y Tsen, Y. P. Chen, V. Nathan

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Abstract

The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.

Original languageEnglish (US)
Pages (from-to)2346-2348
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number16
Publication statusPublished - Apr 19 1999

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rujirawat, S., Xin, Y., Browning, N. D., Sivananthan, S., Smith, D., Tsen, S. C. Y., ... Nathan, V. (1999). CdTe(111)B grown on Si(111) by molecular beam epitaxy. Applied Physics Letters, 74(16), 2346-2348.