CdTe(111)B grown on Si(111) by molecular beam epitaxy

S. Rujirawat; Y. Xin; N. D. Browning; S. Sivananthan; David Smith; S. C Y Tsen; Y. P. Chen; V. Nathan

doi:10.1063/1.123846

CdTe(111)B grown on Si(111) by molecular beam epitaxy

S. Rujirawat, Y. Xin, N. D. Browning, S. Sivananthan, David Smith, S. C Y Tsen, Y. P. Chen, V. Nathan

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Abstract

The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.

Original language	English (US)
Pages (from-to)	2346-2348
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1063/1.123846
State	Published - Apr 19 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "CdTe(111)B grown on Si(111) by molecular beam epitaxy",

abstract = "The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.",

author = "S. Rujirawat and Y. Xin and Browning, {N. D.} and S. Sivananthan and David Smith and Tsen, {S. C Y} and Chen, {Y. P.} and V. Nathan",

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AU - Rujirawat, S.

AU - Xin, Y.

AU - Browning, N. D.

AU - Sivananthan, S.

AU - Smith, David

AU - Tsen, S. C Y

AU - Chen, Y. P.

AU - Nathan, V.

PY - 1999/4/19

Y1 - 1999/4/19

N2 - The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.

AB - The semiconductor growth of CdTe(111)B on nominal Si(111) by molecular beam epitaxy using ZnTe buffer layers was investigated. Transmission electron microscopy image exhibited the structural quality of the films indicating a domain-free structure even in the initial stages of growth.

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CdTe(111)B grown on Si(111) by molecular beam epitaxy

Abstract

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