Abstract

We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D∗) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D∗ is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.

Original languageEnglish (US)
Article number121112
JournalApplied Physics Letters
Volume109
Issue number12
DOIs
StatePublished - Sep 19 2016

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barrier layers
photometers
room temperature
shot noise
dark current
ITO (semiconductors)
high voltages
depletion
cut-off
platforms
retarding
color
physics
augmentation
electric potential
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

He, Z. Y., Campbell, C. M., Lassise, M. B., Lin, Z. Y., Becker, J. J., Zhao, Y., ... Zhang, Y-H. (2016). CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates. Applied Physics Letters, 109(12), [121112]. https://doi.org/10.1063/1.4963135

CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates. / He, Zhao Yu; Campbell, Calli M.; Lassise, Maxwell B.; Lin, Zhi Yuan; Becker, Jacob J.; Zhao, Yuan; Boccard, Mathieu; Holman, Zachary; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 109, No. 12, 121112, 19.09.2016.

Research output: Contribution to journalArticle

He, ZY, Campbell, CM, Lassise, MB, Lin, ZY, Becker, JJ, Zhao, Y, Boccard, M, Holman, Z & Zhang, Y-H 2016, 'CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates', Applied Physics Letters, vol. 109, no. 12, 121112. https://doi.org/10.1063/1.4963135
He ZY, Campbell CM, Lassise MB, Lin ZY, Becker JJ, Zhao Y et al. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates. Applied Physics Letters. 2016 Sep 19;109(12). 121112. https://doi.org/10.1063/1.4963135
He, Zhao Yu ; Campbell, Calli M. ; Lassise, Maxwell B. ; Lin, Zhi Yuan ; Becker, Jacob J. ; Zhao, Yuan ; Boccard, Mathieu ; Holman, Zachary ; Zhang, Yong-Hang. / CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates. In: Applied Physics Letters. 2016 ; Vol. 109, No. 12.
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abstract = "We have demonstrated an 820 nm cutoff CdTe nBn photodetector with ZnTe barrier layer grown on an InSb substrate. At room temperature, under a bias of -0.1 V, the photodetector shows Johnson and shot noise limited specific detectivity (D∗) of 3 × 1013 cm Hz1/2/W at a wavelength of 800 nm and 2 × 1012 cm Hz1/2/W at 200 nm. The D∗ is optimized by using a top contact design of ITO/undoped-CdTe. This device not only possesses nBn advantageous characteristics, such as generation-recombination dark current suppression and voltage-bias-addressed two-color photodetection, but also offers features including responsivity enhancements by deep-depletion and by using a heterostructure ZnTe barrier layer. In addition, this device provides a platform to study nBn device physics at room temperature, which will help us to understand more sophisticated properties of infrared nBn photodetectors that may possess a large band-to-band tunneling current at a high voltage bias, because this current is greatly suppressed in the large-bandgap CdTe nBn photodetector.",
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