Abstract

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63±0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Original languageEnglish (US)
Article number121908
JournalApplied Physics Letters
Volume100
Issue number12
DOIs
StatePublished - Mar 19 2012

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superlattices
molecular beam epitaxy
photoluminescence
optoelectronic devices
envelopes
solar cells
alignment
valence
transmission electron microscopy
approximation
diffraction
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy. / Li, Jing Jing; Liu, Xinyu; Liu, Shi; Wang, Shumin; Smith, David; Ding, Ding; Johnson, Shane; Furdyna, Jacek K.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 100, No. 12, 121908, 19.03.2012.

Research output: Contribution to journalArticle

Li, Jing Jing ; Liu, Xinyu ; Liu, Shi ; Wang, Shumin ; Smith, David ; Ding, Ding ; Johnson, Shane ; Furdyna, Jacek K. ; Zhang, Yong-Hang. / CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy. In: Applied Physics Letters. 2012 ; Vol. 100, No. 12.
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AU - Smith, David

AU - Ding, Ding

AU - Johnson, Shane

AU - Furdyna, Jacek K.

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