CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

Jing Jing Li; Xinyu Liu; Shi Liu; Shumin Wang; David Smith; Ding Ding; Shane Johnson; Jacek K. Furdyna; Yong-Hang Zhang

doi:10.1063/1.3697676

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

Jing Jing Li, Xinyu Liu, Shi Liu, Shumin Wang, David Smith, Ding Ding, Shane Johnson, Jacek K. Furdyna, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

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Abstract

CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63±0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

Original language	English (US)
Article number	121908
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3697676
State	Published - Mar 19 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{e69fce60cbc34254a4797d347f09d4c9,

title = "CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy",

abstract = "CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63±0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.",

author = "Li, {Jing Jing} and Xinyu Liu and Shi Liu and Shumin Wang and David Smith and Ding Ding and Shane Johnson and Furdyna, {Jacek K.} and Yong-Hang Zhang",

note = "Funding Information: This work is partially supported by the Science Foundation Arizona, Contract No. SRG 0339-08, the Air Force Research Laboratory/Space Vehicles Directorate, Contract No. FA9453-08-2-0228, and by NSF grant ECCS-1002072. Jing-Jing Li would like to thank Jin Fan for discussion of XRD data analysis.",

year = "2012",

month = mar,

day = "19",

doi = "10.1063/1.3697676",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

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TY - JOUR

T1 - CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

AU - Li, Jing Jing

AU - Liu, Xinyu

AU - Liu, Shi

AU - Wang, Shumin

AU - Smith, David

AU - Ding, Ding

AU - Johnson, Shane

AU - Furdyna, Jacek K.

AU - Zhang, Yong-Hang

N1 - Funding Information: This work is partially supported by the Science Foundation Arizona, Contract No. SRG 0339-08, the Air Force Research Laboratory/Space Vehicles Directorate, Contract No. FA9453-08-2-0228, and by NSF grant ECCS-1002072. Jing-Jing Li would like to thank Jin Fan for discussion of XRD data analysis.

PY - 2012/3/19

Y1 - 2012/3/19

N2 - CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63±0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

AB - CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63±0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

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DO - 10.1063/1.3697676

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121908

ER -

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

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