CD SEM calibration to TEM for accurate metrology of FINs in MuGFET devices

G. F. Lorusso, N. Collaert, R. Rooyackers, M. Ercken, I. Pollentier, S. Cheng, B. Degroote, M. Jurczak, S. Biesemans, O. Richard, H. Bender, A. Azordegan, R. Kuppa, S. Shirke, J. Prochazka, T. Long

Research output: Contribution to journalConference articlepeer-review


We describe a procedure to calibrate CDSEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.

Original languageEnglish (US)
Article numberPE223
Pages (from-to)169-172
Number of pages4
JournalIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
StatePublished - 2005
Externally publishedYes
EventIEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings - San Jose, CA, United States
Duration: Sep 13 2005Sep 15 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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