Abstract
Attempts had been made to understand the relationships between the structural and electrical properties of the MBE grown low temperature (LT) InP in the previous work. The present paper further studies the observation of metallic indium islands solely in the annealed LT layers in order to better understand the exact reasons for their formation.
Original language | English (US) |
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Title of host publication | Proceedings - Annual Meeting, Microscopy Society of America |
Publisher | Publ by San Francisco Press Inc |
Pages | 810-811 |
Number of pages | 2 |
State | Published - 1993 |
Event | Proceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA Duration: Aug 1 1993 → Aug 6 1993 |
Other
Other | Proceedings of the 51st Annual Meeting Microscopy Society of America |
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City | Cincinnati, OH, USA |
Period | 8/1/93 → 8/6/93 |
ASJC Scopus subject areas
- Engineering(all)