CBED study of low-temperature InP grown by gas source MBE

R. Rajesh, M. J. Kim, J. S. Bow, Ray Carpenter, G. N. Maracas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Attempts had been made to understand the relationships between the structural and electrical properties of the MBE grown low temperature (LT) InP in the previous work. The present paper further studies the observation of metallic indium islands solely in the annealed LT layers in order to better understand the exact reasons for their formation.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
PublisherPubl by San Francisco Press Inc
Pages810-811
Number of pages2
StatePublished - 1993
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: Aug 1 1993Aug 6 1993

Other

OtherProceedings of the 51st Annual Meeting Microscopy Society of America
CityCincinnati, OH, USA
Period8/1/938/6/93

ASJC Scopus subject areas

  • Engineering(all)

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    Rajesh, R., Kim, M. J., Bow, J. S., Carpenter, R., & Maracas, G. N. (1993). CBED study of low-temperature InP grown by gas source MBE. In Proceedings - Annual Meeting, Microscopy Society of America (pp. 810-811). Publ by San Francisco Press Inc.