Abstract
Large angle convergent beam electron diffraction (LACBED) has been used to examine AlGaN epilayers grown by facet-controlled epitaxial lateral overgrowth on GaN/(0 0 0 1) sapphire substrates in prototype UV laser structures. The substrates, defined by masks with seed openings along a 〈10-10〉 stripe direction, had GaN seed columns with {11-22} surfaces. Studies were carried out on cross-sectional samples cut perpendicular to the stripe axis. An LACBED analysis of the orientation of (0 0 0 2) planes, and of the (11-20) planes parallel to the stripe axis, revealed that the AlGaN wings were both rotated by angles of 1-2×10-2 radians about the 〈10-10〉 stripe axis with respect to the underlying GaN, and distorted due to misfit strains. It is shown that the results are consistent with the observed structure of the AlGaN/GaN and the wing/wing boundaries, and with a new model for the generation of a-type misfit dislocations at the AlGaN/GaN interface.
Original language | English (US) |
---|---|
Pages (from-to) | 23-32 |
Number of pages | 10 |
Journal | Ultramicroscopy |
Volume | 103 |
Issue number | 1 |
DOIs | |
State | Published - Apr 2005 |
Keywords
- AlGaN/GaN interface
- Grain rotation
- LACBED
- Misfit dislocations
- Misfit strain
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation