CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson, Umesh K. Mishra

Research output: Contribution to journalArticle

106 Scopus citations

Abstract

A current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device. The fabrication of the device combined a drift region grown by metalorganic chemical vapor deposition (MOCVD), to hold the blocking voltage, with AlGaN/GaN layers regrown by plasma-MBE to conduct current. The device registered a maximum current of 4 kA cm -2 under direct-current operation offering a specific on-state resistance R on-A of 2.2 mΩcm 2. With 80 μs pulses applied to the gate, the devices showed no dispersion. The increased aperture length L ap resulted in the decrease in specific R on, as expected. The impact of the gate overlap to aperture L go on the leakage current was studied, where the leakage current was found to increase with a smaller overlap.

Original languageEnglish (US)
Article number6087264
Pages (from-to)41-43
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number1
DOIs
StatePublished - Jan 1 2012

Keywords

  • AlGaN/GaN
  • Mg-implanted
  • current-aperture vertical electron transistor (CAVET)
  • plasma-MBE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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