CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

Srabanti Chowdhury; Man Hoi Wong; Brian L. Swenson; Umesh K. Mishra

doi:10.1109/LED.2011.2173456

CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson, Umesh K. Mishra

Research output: Contribution to journal › Article › peer-review

154 Scopus citations

Abstract

A current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device. The fabrication of the device combined a drift region grown by metalorganic chemical vapor deposition (MOCVD), to hold the blocking voltage, with AlGaN/GaN layers regrown by plasma-MBE to conduct current. The device registered a maximum current of 4 kA cm ^-2 under direct-current operation offering a specific on-state resistance R _on-A of 2.2 mΩcm ². With 80 μs pulses applied to the gate, the devices showed no dispersion. The increased aperture length L _ap resulted in the decrease in specific R _on, as expected. The impact of the gate overlap to aperture L _go on the leakage current was studied, where the leakage current was found to increase with a smaller overlap.

Original language	English (US)
Article number	6087264
Pages (from-to)	41-43
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1109/LED.2011.2173456
State	Published - Jan 2012
Externally published	Yes

Keywords

AlGaN/GaN
Mg-implanted
current-aperture vertical electron transistor (CAVET)
plasma-MBE

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2173456

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title = "CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion",

abstract = "A current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device. The fabrication of the device combined a drift region grown by metalorganic chemical vapor deposition (MOCVD), to hold the blocking voltage, with AlGaN/GaN layers regrown by plasma-MBE to conduct current. The device registered a maximum current of 4 kA cm -2 under direct-current operation offering a specific on-state resistance R on-A of 2.2 mΩcm 2. With 80 μs pulses applied to the gate, the devices showed no dispersion. The increased aperture length L ap resulted in the decrease in specific R on, as expected. The impact of the gate overlap to aperture L go on the leakage current was studied, where the leakage current was found to increase with a smaller overlap.",

keywords = "AlGaN/GaN, Mg-implanted, current-aperture vertical electron transistor (CAVET), plasma-MBE",

author = "Srabanti Chowdhury and Wong, {Man Hoi} and Swenson, {Brian L.} and Mishra, {Umesh K.}",

note = "Funding Information: Manuscript received September 13, 2011; revised October 3, 2011; accepted October 14, 2011. Date of publication November 24, 2011; date of current version December 23, 2011. This work was supported by Toyota Motor Corporation, Japan, monitored by Dr. M. Sugimoto and Dr. T. Kachi of Toyota Central R&D Laboratories, Japan. The review of this letter was arranged by Editor G. Meneghesso.",

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volume = "33",

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AU - Chowdhury, Srabanti

AU - Wong, Man Hoi

AU - Swenson, Brian L.

AU - Mishra, Umesh K.

N1 - Funding Information: Manuscript received September 13, 2011; revised October 3, 2011; accepted October 14, 2011. Date of publication November 24, 2011; date of current version December 23, 2011. This work was supported by Toyota Motor Corporation, Japan, monitored by Dr. M. Sugimoto and Dr. T. Kachi of Toyota Central R&D Laboratories, Japan. The review of this letter was arranged by Editor G. Meneghesso.

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N2 - A current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device. The fabrication of the device combined a drift region grown by metalorganic chemical vapor deposition (MOCVD), to hold the blocking voltage, with AlGaN/GaN layers regrown by plasma-MBE to conduct current. The device registered a maximum current of 4 kA cm -2 under direct-current operation offering a specific on-state resistance R on-A of 2.2 mΩcm 2. With 80 μs pulses applied to the gate, the devices showed no dispersion. The increased aperture length L ap resulted in the decrease in specific R on, as expected. The impact of the gate overlap to aperture L go on the leakage current was studied, where the leakage current was found to increase with a smaller overlap.

AB - A current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device. The fabrication of the device combined a drift region grown by metalorganic chemical vapor deposition (MOCVD), to hold the blocking voltage, with AlGaN/GaN layers regrown by plasma-MBE to conduct current. The device registered a maximum current of 4 kA cm -2 under direct-current operation offering a specific on-state resistance R on-A of 2.2 mΩcm 2. With 80 μs pulses applied to the gate, the devices showed no dispersion. The increased aperture length L ap resulted in the decrease in specific R on, as expected. The impact of the gate overlap to aperture L go on the leakage current was studied, where the leakage current was found to increase with a smaller overlap.

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CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

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