Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

J. Grant; Jose Menendez; L. N. Pfeiffer; K. W. West; E. Molinari; S. Baroni

doi:10.1063/1.105833

Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

J. Grant, Jose Menendez, L. N. Pfeiffer, K. W. West, E. Molinari, S. Baroni

Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)₄(AlAs)₄ superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.

Original language	English (US)
Pages (from-to)	2859-2861
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	22
DOIs	https://doi.org/10.1063/1.105833
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.",

author = "J. Grant and Jose Menendez and Pfeiffer, {L. N.} and West, {K. W.} and E. Molinari and S. Baroni",

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AU - Grant, J.

AU - Menendez, Jose

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Molinari, E.

AU - Baroni, S.

PY - 1991

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AB - A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.

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Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

Abstract

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