Abstract

This paper describes cation-based resistive memory, which utilizes a high resistance silver- or copper-containing oxide or higher chalcogenide electrolyte sandwiched between oxidizable and inert electrodes. Device function is via ion transport and redox reactions which form or dissolve a conductive metallic bridge. The on-state resistance is controlled by the programming conditions, allowing multi-level/multi-bit storage via discrete resistance states. A doped Si electrode may be used with the on-state filament to create an integrated rectifying isolation element which potentially allows multi-layer compact passive structures to be fabricated. The paper features foundry-produced arrays as well as some of the latest research findings on devices that utilize Ag-Ge-S and Cu-SiO2 ion conducting films.

Original languageEnglish (US)
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - Sep 26 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China
Duration: Jun 21 2011Jun 24 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan, Province of China
CityTao-Yuan
Period6/21/116/24/11

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Keywords

  • Ionic memory
  • Programmable Metallization Cell
  • multi-level cell and active and passive arrays
  • resistance change

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kozicki, M. (2011). Cation-based resistive memory. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991737] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991737