This paper describes cation-based resistive memory, which utilizes a high resistance silver- or copper-containing oxide or higher chalcogenide electrolyte sandwiched between oxidizable and inert electrodes. Device function is via ion transport and redox reactions which form or dissolve a conductive metallic bridge. The on-state resistance is controlled by the programming conditions, allowing multi-level/multi-bit storage via discrete resistance states. A doped Si electrode may be used with the on-state filament to create an integrated rectifying isolation element which potentially allows multi-layer compact passive structures to be fabricated. The paper features foundry-produced arrays as well as some of the latest research findings on devices that utilize Ag-Ge-S and Cu-SiO2 ion conducting films.