Cathodoluminescence studies of InGaN quantum wells

Fernando Ponce, S. A. Galloway, W. Goetz, R. S. Kern

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Low temperature cathodoluminescence has been used to investigate the spatial characteristics of light emission in In xGa 1-xN single quantum wells. High spatial resolution, narrow band pass imaging shows the luminescence to be strongly inhomogeneous in wavelength as well as in intensity on a sub-micron scale. Cathodoluminescence spectra correlate favorably with photoluminescence spectra. However, when spectra are recorded from different areas in spot mode, the quantum emission varies significantly in wavelength. The observed variations are consistent with composition inhomogeneities in the quantum well.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages625-630
Number of pages6
Volume482
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period12/1/9712/4/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Ponce, F., Galloway, S. A., Goetz, W., & Kern, R. S. (1997). Cathodoluminescence studies of InGaN quantum wells. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 625-630). MRS.