Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks

T. K. Whidden, J. Allgair, J. M. Ryan, Michael Kozicki, D. K. Ferry

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A novel means of pattern generation and transfer combining electron beam lithography of scanning tunneling, microscopy (STM) patterning with HF vapor etching is reported. HF vapor etch rates in silicon dioxide are found to be markedly enhanced by the presence of adsorbed hydrocarbon species that have been positionally fixed in either the electron beam tool or using the STM. Etch selectivities of at least 100 have been shown to be achievable in electron beam experiments for pattern generation. The relationships that exist between electron beam parameters and the observed etch rates are discussed in terms of possible chemical mechanism extent on the surface during and after electron beam exposure. Feature generation in silicon dioxide using electron beam approaches is reported for

Original languageEnglish (US)
Pages (from-to)1199-1205
Number of pages7
JournalJournal of the Electrochemical Society
Volume142
Issue number4
DOIs
StatePublished - 1995

Fingerprint

Silicon Dioxide
Masks
Electron beams
Etching
masks
Vapors
Silica
etching
electron beams
vapors
silicon dioxide
Scanning tunneling microscopy
scanning tunneling microscopy
Electron beam lithography
Hydrocarbons
lithography
hydrocarbons
selectivity
Experiments

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks. / Whidden, T. K.; Allgair, J.; Ryan, J. M.; Kozicki, Michael; Ferry, D. K.

In: Journal of the Electrochemical Society, Vol. 142, No. 4, 1995, p. 1199-1205.

Research output: Contribution to journalArticle

Whidden, T. K. ; Allgair, J. ; Ryan, J. M. ; Kozicki, Michael ; Ferry, D. K. / Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks. In: Journal of the Electrochemical Society. 1995 ; Vol. 142, No. 4. pp. 1199-1205.
@article{71107b90bff74dfd9f5a7e9852f24979,
title = "Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks",
abstract = "A novel means of pattern generation and transfer combining electron beam lithography of scanning tunneling, microscopy (STM) patterning with HF vapor etching is reported. HF vapor etch rates in silicon dioxide are found to be markedly enhanced by the presence of adsorbed hydrocarbon species that have been positionally fixed in either the electron beam tool or using the STM. Etch selectivities of at least 100 have been shown to be achievable in electron beam experiments for pattern generation. The relationships that exist between electron beam parameters and the observed etch rates are discussed in terms of possible chemical mechanism extent on the surface during and after electron beam exposure. Feature generation in silicon dioxide using electron beam approaches is reported for",
author = "Whidden, {T. K.} and J. Allgair and Ryan, {J. M.} and Michael Kozicki and Ferry, {D. K.}",
year = "1995",
doi = "10.1149/1.2044152",
language = "English (US)",
volume = "142",
pages = "1199--1205",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

TY - JOUR

T1 - Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks

AU - Whidden, T. K.

AU - Allgair, J.

AU - Ryan, J. M.

AU - Kozicki, Michael

AU - Ferry, D. K.

PY - 1995

Y1 - 1995

N2 - A novel means of pattern generation and transfer combining electron beam lithography of scanning tunneling, microscopy (STM) patterning with HF vapor etching is reported. HF vapor etch rates in silicon dioxide are found to be markedly enhanced by the presence of adsorbed hydrocarbon species that have been positionally fixed in either the electron beam tool or using the STM. Etch selectivities of at least 100 have been shown to be achievable in electron beam experiments for pattern generation. The relationships that exist between electron beam parameters and the observed etch rates are discussed in terms of possible chemical mechanism extent on the surface during and after electron beam exposure. Feature generation in silicon dioxide using electron beam approaches is reported for

AB - A novel means of pattern generation and transfer combining electron beam lithography of scanning tunneling, microscopy (STM) patterning with HF vapor etching is reported. HF vapor etch rates in silicon dioxide are found to be markedly enhanced by the presence of adsorbed hydrocarbon species that have been positionally fixed in either the electron beam tool or using the STM. Etch selectivities of at least 100 have been shown to be achievable in electron beam experiments for pattern generation. The relationships that exist between electron beam parameters and the observed etch rates are discussed in terms of possible chemical mechanism extent on the surface during and after electron beam exposure. Feature generation in silicon dioxide using electron beam approaches is reported for

UR - http://www.scopus.com/inward/record.url?scp=0040040406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040040406&partnerID=8YFLogxK

U2 - 10.1149/1.2044152

DO - 10.1149/1.2044152

M3 - Article

AN - SCOPUS:0040040406

VL - 142

SP - 1199

EP - 1205

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 4

ER -