Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells

Swee H. Lim; Charles R. Allen; Ding Ding; Xinyu Liu; Jacek K. Furdyna; Dragica Vasileska; Yong-Hang Zhang

doi:10.1109/PVSC.2011.6185893

Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells

Swee H. Lim, Charles R. Allen, Ding Ding, Xinyu Liu, Jacek K. Furdyna, Dragica Vasileska, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.

Original language	English (US)
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	252-255
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2011.6185893
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: Jun 19 2011 → Jun 24 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	6/19/11 → 6/24/11

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2011.6185893

Cite this

Lim, S. H., Allen, C. R., Ding, D., Liu, X., Furdyna, J. K., Vasileska, D., & Zhang, Y.-H. (2011). Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 252-255). Article 6185893 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6185893

Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells. / Lim, Swee H.; Allen, Charles R.; Ding, Ding et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 252-255 6185893 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lim, SH, Allen, CR, Ding, D, Liu, X, Furdyna, JK, Vasileska, D & Zhang, Y-H 2011, Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6185893, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 252-255, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 6/19/11. https://doi.org/10.1109/PVSC.2011.6185893

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abstract = "We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.",

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AU - Vasileska, Dragica

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AB - We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.

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Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells

Abstract

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ASJC Scopus subject areas

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