Abstract

We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages252-255
Number of pages4
DOIs
Publication statusPublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period6/19/116/24/11

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Lim, S. H., Allen, C. R., Ding, D., Liu, X., Furdyna, J. K., Vasileska, D., & Zhang, Y-H. (2011). Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 252-255). [6185893] https://doi.org/10.1109/PVSC.2011.6185893