Carrier transport and velocity overshoot in strained Si on SiGe heterostructures

David K. Ferry, Gabriele Formicone, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We examine the velocity overshoot effect in strained Si on Si xGe 1-x heterostructures. We also investigate the performance of surface-channel strained-Si MOSFETs for devices with gate lengths representative of the state-of-the-art technology. The Ensemble Monte Carlo method, self-consistently coupled with the 2D Poisson equation solver, is used in the investigation of the device performance. Our simulations suggest that, in short-channel devices, velocity overshoot is very important. In fact, when velocity overshoot occurs, it greatly affects the carrier dynamics and the current enhancement factor of both surface-channel strained-Si and conventional Si MOSFET.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages31-42
Number of pages12
Volume533
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

Other

OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/13/984/17/98

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Ferry, D. K., Formicone, G., & Vasileska, D. (1998). Carrier transport and velocity overshoot in strained Si on SiGe heterostructures. In Materials Research Society Symposium - Proceedings (Vol. 533, pp. 31-42). MRS.