Abstract
We examine the velocity overshoot effect in strained Si on Si xGe 1-x heterostructures. We also investigate the performance of surface-channel strained-Si MOSFETs for devices with gate lengths representative of the state-of-the-art technology. The Ensemble Monte Carlo method, self-consistently coupled with the 2D Poisson equation solver, is used in the investigation of the device performance. Our simulations suggest that, in short-channel devices, velocity overshoot is very important. In fact, when velocity overshoot occurs, it greatly affects the carrier dynamics and the current enhancement factor of both surface-channel strained-Si and conventional Si MOSFET.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | MRS |
| Pages | 31-42 |
| Number of pages | 12 |
| Volume | 533 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 17 1998 |
Other
| Other | Proceedings of the 1998 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/13/98 → 4/17/98 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials